參數(shù)資料
型號: HYB18T256324F-22
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit GDDR3 DRAM [600MHz]
中文描述: 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁數(shù): 51/80頁
文件大?。?/td> 2026K
代理商: HYB18T256324F-22
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Functional Description
Data Sheet
51
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
3.8.3.3
Read followed by DTERDIS
Figure 34
Read Command followed by DTERDIS
1. At least 3 NOPs are required between a READ command and a DTERDIS command in order to avoid
contention on the RDQS bus in a 2 rank system.
2. CAS Latency 5 is used as an example.
3. The DQ terminations are switched off (CL-1) clock periods after the DTERDIS command for a duration of
(BL/2 + 2 ) clocks.
4. The dashed lines (RDQS bus) describe the RDQS behavior in the case where the DTERDIS command
corresponds to a Read command applied to the second Graphics DRAM in a 2 rank system. In this case,
RDQS would be driven by the second Graphics DRAM.
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