參數(shù)資料
型號(hào): HMT351V7BFR8C-H9
廠(chǎng)商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): DRAM
英文描述: DDR DRAM MODULE, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁(yè)數(shù): 29/61頁(yè)
文件大小: 1050K
代理商: HMT351V7BFR8C-H9
Rev. 0.1 / Feb. 2010
35
Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
Clock, Data, Strobe and Mask Overshoot and Undershoot Definition
AC Overshoot/Undershoot Specification for Clock, Data, Strobe and Mask
Parameter
DDR3-800 DDR3-1066 DDR3-1333 Units
Maximum peak amplitude allowed for overshoot area (See figure below)
0.4
V
Maximum peak amplitude allowed for undershoot area (See figure below)
0.4
V
Maximum overshoot area above VDD (See figure below)
0.25
0.19
0.15
V-ns
Maximum undershoot area below VSS (See figure below)
0.25
0.19
0.15
V-ns
(CK, CK, DQ, DQS, DQS, DM)
See figure below for each parameter definition
Maxim um A m plitude
Overshoot A rea
V DDQ
V SSQ
Maxim um A m plitude
Undershoot Area
Tim e (ns)
Clock, D ata Strobe and M ask O vershoot and U ndershoot D efinition
Volts
(V )
相關(guān)PDF資料
PDF描述
HN4400 NPN EXPITAXIAL SILICON TRANSISTOR
HN5400 PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications
HN5401 PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications
HN546 NPN Silicon Epitaxial Planar Transistor
HN547 NPN Silicon Epitaxial Planar Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMT351V7BMR4C-G7 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:240pin DDR3 SDRAM VLP Registered DIMM
HMT351V7BMR4C-H9 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:240pin DDR3 SDRAM VLP Registered DIMM
HMT351V7BMR8C-G7 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:240pin DDR3 SDRAM VLP Registered DIMM
HMT351V7BMR8C-H9 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:240pin DDR3 SDRAM VLP Registered DIMM
HMT351V7CFR4A 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:DDR3L SDRAM VLP Registered DIMM Based on 2Gb C-die