參數(shù)資料
型號(hào): HMT351V7BFR8C-H9
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: DDR DRAM MODULE, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁(yè)數(shù): 2/61頁(yè)
文件大?。?/td> 1050K
代理商: HMT351V7BFR8C-H9
Rev. 0.1 / Feb. 2010
10
Registering Clock Driver Specifications
Capacitance Values
Input & Output Timing Requirements
Symbol
Parameter
Conditions
Min
Typ Max
Unit
CI
Input capacitance, Data inputs
1.5
-
2.5
pF
Input capacitance, CK, CK, FBIN, FBIN
2
-
3
pF
Input capacitance, CK, CK, FBIN, FBIN
(DDR3-1600)
1.5
-
2.5
pF
CIR
Input capacitance, RESET, MIRROR,
QCSEN
VI = VDD or GND; VDD = 1.5v
--
3
pF
Symbol
Parameter
Conditions
DDR3-800
1066/1333
Unit
Min
Max
fclock
Input clock frequency
Application frequency
300
670
Mhz
fTEST
Input clock frequency
Test frequency
70
300
Mhz
tSU
Setup time
Input valid before CK/CK
100
-
ps
tH
Hold time
Input to remain valid after CK/CK
175
-
ps
tPDM
Propagation delay, single-
bit switching
CK/CK to output
0.65
1.0
ns
tDIS
Output disable time (1/2-
Clock prelaunch)
Yn/Yn to output float
0.5 tCK +
tQSK1(min)
-ps
tEN
Output enable time (1/2-
Clock prelaunch)
Output driving to Yn/Yn
0.5 tCK -
tQSK1(max)
-ps
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