參數(shù)資料
型號(hào): EDI416S4030A10SI
英文描述: 1Mx 16 Bits x 4 Banks Synchronous DRAM(100MHz,1M x 16 位 x 4 組同步動(dòng)態(tài)RAM)
中文描述: 1Mx 16位× 4個(gè)銀行同步DRAM(100MHz的,100萬× 16位× 4個(gè)組同步動(dòng)態(tài)RAM)的
文件頁數(shù): 25/26頁
文件大?。?/td> 353K
代理商: EDI416S4030A10SI
8
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI416S4030A
June 2000 Rev. 0
CURRENT STATE TRUTH TABLE
L
OP Code
Mode Register Set
Set the Mode Register
2
L
H
X
Auto orSelf Refresh
Start Auto orSelf Refresh
2,3
L
H
L
X
Precharge
No Operation
L
H
BA
Row Address
Bank Activate
Activate the specified bank and row
Idle
L
H
L
BA
Column
Write w/o Precharge
ILLEGAL
4
L
H
L
H
BA
Column
Read w/o Precharge
ILLEGAL
4
L
H
L
X
Burst Termination
No Operation
L
H
X
No Operation
H
X
Device Deselect
No Operation or Power Down
5
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
6
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Row Active
L
H
L
BA
Column
Write
Start Write; Determine if Auto Precharge
7,8
L
H
L
H
BA
Column
Read
Start Read; Determine if Auto Precharge
7,8
L
H
L
X
Burst Termination
No Operation
L
H
X
No Operation
H
X
Device Deselect
No Operation
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Read
L
H
L
BA
Column
Write
Terminate Burst; Start the Write cycle
8,9
L
H
L
H
BA
Column
Read
Terminate Burst; Start a new Read cycle
8,9
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Write
L
H
L
BA
Column
Write
Terminate Burst; Start a new Write cycle
8,9
L
H
L
H
BA
Column
Read
Terminate Burst; Start the Read cycle
8,9
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
4
Read with
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Auto Precharge
L
H
L
BA
Column
Write
ILLEGAL
L
H
L
H
BA
Column
Read
ILLEGAL
L
H
L
X
Burst Termination
ILLEGAL
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
Current State
Command
Action
Notes
CE
RAS
CAS
WE
BA
A11,
Description
A10/AP-A0
相關(guān)PDF資料
PDF描述
EDI416S4030A12SI 1Mx 16 Bits x 4 Banks Synchronous DRAM(83MHz,1M x 16 位 x 4 組同步動(dòng)態(tài)RAM)
EDI441024C70FC 64kx8 EEPROM CMOS, MIL-STD-883, 250ns; Temperature Range: -55°C to 125°C; Package: LCC
EDI441024C70FI x4 Fast Page Mode DRAM
EDI441024C70FM x4 Fast Page Mode DRAM
EDI441024C70LZB x4 Fast Page Mode DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDI416S4030A12SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1Mx16 Bits x 4 Banks Synchronous DRAM
EDI416S4030A-SI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Industrial SDRAM
EDI441024C100BB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
EDI441024C100BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
EDI441024C100BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM