參數(shù)資料
型號: EDI416S4030A10SI
英文描述: 1Mx 16 Bits x 4 Banks Synchronous DRAM(100MHz,1M x 16 位 x 4 組同步動態(tài)RAM)
中文描述: 1Mx 16位× 4個(gè)銀行同步DRAM(100MHz的,100萬× 16位× 4個(gè)組同步動態(tài)RAM)的
文件頁數(shù): 13/26頁
文件大?。?/td> 353K
代理商: EDI416S4030A10SI
20
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI416S4030A
June 2000 Rev. 0
FIG. 11 READ INTERRUPTED BY PRECHARGE COMMAND & READ BURST STOP @ BURST
LENGTH=FULL PAGE
RAS
CAS
ADDR
BA
DQM
A10/AP
CKE
CLOCK
CE
CAb
CAa
RAa
CL = 2
Precharge
(A-Bank)
Read
(A-Bank)
Burst Stop
Read
(A-Bank)
Row Active
(A-Bank)
WE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
HIGH
DON'T CARE
RAa
QAa0
QAa1
QAa2
QAa3
QAa4
QAb1
QAb0
QAb3
QAb2
QAb5
QAb4
CL = 3
DQ
QAa0
QAa1
QAa2
QAa3
QAa4
QAb1
QAb0
QAb3
QAb2
QAb5
QAb4
Note 2
1
2
NOTES:
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt. Both cases are illustrated
in above timing diagram. See the label 1, 2. But at burst write, Burst stop and RAS interrupt should be
compared carefully. Refer to the timing diagram of "Full page write burst stop cycle."
3. Burst stop is valid at every burst length.
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