參數(shù)資料
型號: EDI416S4030A10SI
英文描述: 1Mx 16 Bits x 4 Banks Synchronous DRAM(100MHz,1M x 16 位 x 4 組同步動態(tài)RAM)
中文描述: 1Mx 16位× 4個(gè)銀行同步DRAM(100MHz的,100萬× 16位× 4個(gè)組同步動態(tài)RAM)的
文件頁數(shù): 17/26頁
文件大?。?/td> 353K
代理商: EDI416S4030A10SI
24
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI416S4030A
June 2000 Rev. 0
FIG. 15 SELF REFRESH ENTRY & EXIT CYCLE
RAS
CAS
ADDR
BA
DQM
A10/AP
CKE
CLOCK
CE
DQ
Auto Refresh
Self Refresh Entry
Self Refresh Exit
WE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
tSS
DON'T CARE
Note 1
Note 3
Note 4
tRFC min
Note 6
Note 5
Note 7
HI-Z
Note 2
NOTES:
TO ENTER SELF REFRESH MODE
1. CE, RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.
3. The device remains in self refresh mode as long as CKE stays "Low." Once the device enters self
refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CE starts from high.
6. Minimum tRFC is required after CKE going high to complete self refresh exit.
7. 4K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the
system uses burst refresh.
相關(guān)PDF資料
PDF描述
EDI416S4030A12SI 1Mx 16 Bits x 4 Banks Synchronous DRAM(83MHz,1M x 16 位 x 4 組同步動態(tài)RAM)
EDI441024C70FC 64kx8 EEPROM CMOS, MIL-STD-883, 250ns; Temperature Range: -55°C to 125°C; Package: LCC
EDI441024C70FI x4 Fast Page Mode DRAM
EDI441024C70FM x4 Fast Page Mode DRAM
EDI441024C70LZB x4 Fast Page Mode DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDI416S4030A12SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1Mx16 Bits x 4 Banks Synchronous DRAM
EDI416S4030A-SI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Industrial SDRAM
EDI441024C100BB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
EDI441024C100BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
EDI441024C100BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM