| 型號 | 廠商 | 描述 |
| k4h560438b-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560438e-nlb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125 |
| k4h560438e-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125 |
| k4h560438e-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560438e-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560438e-tcaa 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| k4h560438e-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -40 to 85 |
| k4h560438e-tcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| k4h560438e-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560438e-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Micropower Precision Low-Voltage Operational Amplifier 8-PDIP -40 to 85 |
| k4h560438e-tlaa 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 |
| k4h560438e-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560438e-tlb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| k4h560438e-ulb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h560438e-zca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| k4h560438a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 500mW 5.1Vz 0.05mA-Izt 0.05 5uA-Ir 3 SOD-123 3K/REEL |
| k4h560438d-glb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 150mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-523 3K/REEL |
| k4h560438d-glb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 150mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-523 3K/REEL |
| k4h560438d-nc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-323 3K/REEL |
| k4h560438e-gc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL |
| k4h560438e-gca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL |
| k4h560438e-gcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL |
| k4h560438e-gcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL |
| k4h560438e-gcc4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL |
| k4h560438e-gccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL |
| k4h560438e-gla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 33Vz 5mA-Izt 0.02503 0.05uA-Ir 27 SOT-23 3K/REEL |
| k4h560438e-nca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) |
| k4h560838e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP |
| k4h560838e-tcaa 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| k4h560838e-tcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP |
| k4h560838e-tlaa 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| k4h560838e-tlb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP |
| k4h561638f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR SDRAM Specification |
| k4j52324qc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit GDDR3 SDRAM |
| k4j52324qc-bc14 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit GDDR3 SDRAM |
| k4j52324qc-bc16 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit GDDR3 SDRAM |
| k4j52324qc-bc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit GDDR3 SDRAM |
| k4j52324qc-bj12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit GDDR3 SDRAM |
| k4j52324qc-bj14 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit GDDR3 SDRAM |
| k4m281633f 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m281633f-c 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m281633f-f1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m281633f-g 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m281633f-l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m281633f-n 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m281633f-re 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m28163lf 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m28163lf-c 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m28163lf-l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| k4m28163lf-n 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |