參數資料
型號: K4M281633F-G
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
中文描述: 200萬× 16 × 4銀行在54FBGA移動SDRAM
文件頁數: 5/12頁
文件大?。?/td> 114K
代理商: K4M281633F-G
K4M281633F - R(B)E/N/G/C/L/F
December 2003
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40
°
C/Max 70
°
C, In extended Temp : Max 40
°
C/Max 85
°
C
4. K4M281633F-R(B)E/C**
5. K4M281633F-R(B)N/L**
6. K4M281633F-R(B)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
80
75
75
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
0.5
mA
I
CC2
PS
CKE & CLK
V
IL
(max), t
CC
=
0.5
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
12
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
10
Active Standby Current
in power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
7
mA
I
CC3
PS
CKE & CLK
V
IL
(max), t
CC
=
7
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
23
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
20
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
130
130
110
mA
1
Refresh Current
I
CC
5
t
RC
t
RC
(min)
170
170
155
mA
2
Self Refresh Current
I
CC
6
CKE
0.2V
-E/C
700
uA
4
-N/L
500
5
-G/F
Internal TCSR
Max 40
Max 85/70
°
C
3
Full Array
350
500
uA
6
1/2 of Full Array
300
400
1/4 of Full Array
280
360
相關PDF資料
PDF描述
K4M281633F-L 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-N 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-RE 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF-C 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
相關代理商/技術參數
參數描述
K4M281633F-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-N 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-RE 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-RL75T00 制造商:Samsung 功能描述:128 MOBILE SDRAM X16 WBGA - Tape and Reel
K4M281633F-RN75000 制造商:Samsung Semiconductor 功能描述:128 MOBILE SDRAM X16 WBGA - Trays