參數(shù)資料
型號: K4H560838E-TCAA
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die DDR SDRAM Specification 66 TSOP-II
中文描述: 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格66 TSOP-II
文件頁數(shù): 12/24頁
文件大?。?/td> 214K
代理商: K4H560838E-TCAA
DDR SDRAM
DDR SDRAM 256Mb E-die (x4, x8)
Rev. 1.3 April. 2005
DDR SDRAM I
DD
spec table
(V
DD
=2.7V, T = 10
°
C)
Symbol
64Mx4 (K4H560438E)
Unit
Notes
B3(DDR333@CL=2.5)
AA(DDR266@CL=2.0)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
IDD0
90
90
80
mA
IDD1
110
110
100
mA
IDD2P
3
3
3
mA
IDD2F
25
20
20
mA
IDD2Q
20
18
18
mA
IDD3P
35
30
30
mA
IDD3N
55
45
45
mA
IDD4R
140
120
120
mA
IDD4W
160
135
135
mA
IDD5
170
160
160
mA
IDD6
Normal
3
3
3
mA
Low power
1.5
1.5
1.5
mA
Optional
IDD7A
260
260
240
mA
Symbol
32Mx8 (K4H560838E)
Unit
Notes
B3(DDR333@CL=2.5)
AA(DDR266@CL=2.0)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
IDD0
90
90
80
mA
IDD1
115
115
105
mA
IDD2P
3
3
3
mA
IDD2F
25
20
20
mA
IDD2Q
20
18
18
mA
IDD3P
35
30
30
mA
IDD3N
55
45
45
mA
IDD4R
160
140
140
mA
IDD4W
160
135
135
mA
IDD5
170
160
160
mA
IDD6
Normal
3
3
3
mA
Low power
1.5
1.5
1.5
mA
Optional
IDD7A
280
280
250
mA
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