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參數(shù)資料
| 型號(hào)： | K4H560838E-TCB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 串行ADC |
| 英文描述： | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格66 TSOP-II |
| 文件頁數(shù)： | 16/24頁 |
| 文件大?。?/td> | 214K |
| 代理商： | K4H560838E-TCB3 |
DDR SDRAM
DDR SDRAM 256Mb E-die (x4, x8)
Rev. 1.3 April. 2005
Parameter
Symbol
B3
(DDR333@CL=2.5))
Min
AA
(DDR266@CL=2.0)
Min
A2
(DDR266@CL=2.0)
Min
B0
(DDR266@CL=2.5))
Min
Unit
Note
Max
Max
Max
Max
Mode register set cycle time
tMRD
12
15
15
15
ns
DQ & DM setup time to DQS
tDS
0.45
0.5
0.5
0.5
ns
j, k
DQ & DM hold time to DQS
tDH
0.45
0.5
0.5
0.5
ns
j, k
Control & Address input pulse width
tIPW
2.2
2.2
2.2
2.2
ns
8
DQ & DM input pulse width
tDIPW
1.75
1.75
1.75
1.75
ns
8
Power down exit time
tPDEX
6
7.5
7.5
7.5
ns
Exit self refresh to non-Read command
tXSNR
75
75
75
75
ns
Exit self refresh to read command
tXSRD
200
200
200
200
tCK
Refresh interval time
tREFI
7.8
7.8
7.8
7.8
us
4
Output DQS valid window
tQH
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
ns
11
Clock half period
tHP
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
ns
10, 11
Data hold skew factor
tQHS
0.55
0.75
0.75
0.75
ns
11
DQS write postamble time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
2
Active to Read with Auto precharge
command
tRAP
18
20
20
20
Autoprecharge write recovery +
Precharge time
tDAL
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
tCK
13
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| K4H560838E-TLB3 | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H560838E-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
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