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參數(shù)資料
| 型號： | K4H560438E-TLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內存規(guī)格66 TSOP-II |
| 文件頁數(shù)： | 6/26頁 |
| 文件大小： | 291K |
| 代理商： | K4H560438E-TLB3 |
- 6 -
256Mb
DDR SDRAM
Rev. 2.2 Mar. ’03
Bank Select
Timing Register
A
R
R
R
C
Data Input Register
Serial to parallel
2Mx32
2Mx32
2Mx32
2Mx32
S
2
O
I
Column Decoder
Latency & Burst Length
Programming Register
D
S
G
ADD
LCKE
CK, CK
CKE
CS
RAS
CAS
WE
CK, CK
LCAS
LRAS
LCBR
LWE
LWCBR
L
L
CK, CK
32
32
16
16
LWE
LDM
x16
DQi
Data Strobe
Block Diagram (4Mbit x 16 I/O x 4 Banks)
相關PDF資料 |
PDF描述 |
|---|---|
| K4H560438E-ULB3 | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-ZCA2 | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560438A-TCA0 | DIODE ZENER SINGLE 500mW 5.1Vz 0.05mA-Izt 0.05 5uA-Ir 3 SOD-123 3K/REEL |
| K4H560438D-GLB0 | DIODE ZENER SINGLE 150mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-523 3K/REEL |
| K4H560438D-GLB3 | DIODE ZENER SINGLE 150mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-523 3K/REEL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560438E-UC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-UC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-UC/LAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-UC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-UC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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