
CYNSE70064A
Document #: 38-02041 Rev. *E
Page 102 of 127
12.4
The following explains the SRAM Read operation completed through a table of up to eight devices using the following parameters:
TLSZ = 01.
Figure 12-2
diagrams a block of eight devices. The following assumes that SRAM access is successfully achieved
through CYNSE70064A device number 0.
Figure 12-3
and
Figure 12-4
show timing diagrams for device number 0 and device
number 7, respectively.
Cycle 1A
: The host ASIC applies the Read instruction on CMD[1:0] using CMDV = 1. The DQ bus supplies the address, with
DQ[20:19] set to 10, to select the SRAM address. The host ASIC selects the device for which ID[4:0] matches the DQ[25:21]
lines. During this cycle the host ASIC also supplies SADR[21:20] on CMD[8:7].
Cycle 1B
: The host ASIC continues to apply the Read instruction on CMD[1:0] using CMDV = 1. The DQ bus supplies the
address, with DQ[20:19] set to 10 to select the SRAM address.
Cycle 2
: The host ASIC floats DQ[67:0] to a three-state condition.
Cycle 3
: The host ASIC keeps DQ[67:0] in a three-state condition.
Cycle 4
: The selected device starts to drive DQ[67:0].
Cycle 5
: The selected device continues to drive DQ[67:0] and drives ACK from High-Z to LOW.
Cycle 6
: The selected device drives the Read address on SADR[21:0]. It also drives ACK HIGH, CE_L LOW, WE_L HIGH,
and ALE_L LOW.
Cycle 7
: The selected device drives CE_L, ALE_L, WE_L, and DQ bus in a three-state condition. It continues to drive ACK LOW.
At the end of cycle 7, the selected device floats ACK in three-state condition and a new command can begin.
SRAM Read with a Table of up to Eight Devices
cycle
1
CLK2X
DQ
Read
Address
ACK
OE_L
WE_L
ALE_L
SADR
Address
cycle
2
cycle
3
cycle
4
cycle
5
cycle
6
TLSZ = 00, HLAT = 000, LRAM = 1, LDEV = 1
PHS_L
CMD[8:2]
A
B
z
z
0
1
0
z
z
0
0
1
z
1
z
1
SSV
0
0
SSF
CE_L
1
0
1
DQ driven by CYNSE70064A
CMDV
CMD[1:0]
Figure 12-1. SRAM Read Access (TLSZ = 00, HLAT = 000, LRAM = 1, LDEV = 1)