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| 型號： | 28F1602C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數(shù)： | 8/62頁 |
| 文件大?。?/td> | 538K |
| 代理商： | 28F1602C3 |
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28F1602C3, 28F3204C3
E
8
PRODUCT PREVIEW
Table 1. 3 Volt Advanced+ Stacked-CSP Ball Descriptions
(Continued)
Symbol
Type
Name and Function
F-WP#
INPUT
FLASH WRITE PROTECT:
Controls the lock-down function of the flexible
Locking feature.
When F-WP# is a logic low, the lock-down mechanism is enabled
and blocks
marked lock-down cannot be unlocked through software.
When F-WP# is logic high, the lock-down mechanism is disabled
and blocks
previously locked-down are now locked and can be unlocked and locked through
software. After F-WP# goes low, any blocks previously marked lock-down revert
to that state.
See Section 6.0 for details on block locking.
F-V
CC
SUPPLY
FLASH POWER SUPPLY:
[2.7 V
–3.3 V] Supplies power for device operations.
S-V
CC
SUPPLY
SRAM POWER SUPPLY:
[2.7 V–3.3 V] Supplies power for device operations.
F-V
PP
INPUT /
SUPPLY
FLASH PROGRAM/ERASE POWER SUPPLY:
[1.65 V–3.3 V or 11.4 V–12.6 V]
Operates as a input at logic levels to control complete flash protection. Supplies
power for accelerated flash program and erase operations in 12 V
±
5% range.
This ball cannot be left floating.
Lower
F-
V
PP
≤
V
PPLK
, to protect all contents
against Program and Erase
commands.
Set
F-
V
PP
=
F-
V
CC
for in-system read, program and erase operations
. In this
configuration, F-V
PP
can drop as low as 1.65 V to allow for resistor or diode drop
from the system supply. Note that if F-V
PP
is driven by a logic signal, V
IH =
1.65 V.
That is, F-V
PP
must remain above 1.65 V to perform in-system flash modifications.
Raise
F-
V
PP
to 12 V
±
5% for faster program and erase
in a production
environment. Applying 12 V
±
5% to F-V
PP
can only be done for a maximum of
1000 cycles on the main blocks and 2500 cycles on the parameter blocks.
F-V
PP
may be connected to 12 V for a total of 80 hours maximum.
F-GND
SUPPLY
FLASH GROUND:
For all internal circuitry. All ground inputs
must
be connected.
S-GND
SUPPLY
SRAM GROUND:
For all internal circuitry. All ground inputs
must
be connected.
DU
DON’T USE: Do not drive ball to V
IH
or V
IL
. Leave unconnected.
3.0
STACKED CHIP SCALE
PACKAGE ORGANIZATION
The 3 Volt Advanced+ Stacked-CSP contains a
flash and a SRAM component. The flash device is
asymmetrically-blocked
integration of code and data storage in a single
device.
Each
flash
block
independently of the others up to 100,000 times.
For the address locations of each flash block, see
the memory maps in Appendix C.
to
enable
system
can
be
erased
Figure 2 illustrates the Stacked-CSP block diagram.
4.0
PRINCIPLES OF OPERATION
The 3 Volt Advanced+ Stacked-CSP incorporates
flash and SRAM in a single package.
The flash memory utilizes a CUI and automated
algorithms
to
simplify
operations. The internal algorithms are controlled
by an internal WSM. The CUI handles the interface
to the data and address latches, as well as system
status requests during WSM operation.
program
and
erase
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