參數資料
型號: 28F1602C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器)
中文描述: 3伏高級堆疊芯片級封裝存儲器(3V的閃速存儲器和靜態(tài)存儲器)
文件頁數: 25/62頁
文件大小: 538K
代理商: 28F1602C3
E
9.5
28F1602C3, 28F3204C3
25
PRODUCT PREVIEW
Flash AC Characteristics
—Read Operations
(1, 4)
—Extended Temperature
Density
16 Mbit
Product
–90
–110
Volt
3.0 V–3.3 V
2.7 V–3.3 V
3.0 V–3.3 V 2.7 V–3.3 V
#
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Min
Max Unit
R1
t
AVAV
Read Cycle Time
80
90
100
110
ns
R2
t
AVQV
Address to
Output Delay
80
90
100
110
ns
R3
t
ELQV
F-CE# to Output
Delay
2
80
90
100
110
ns
R4
t
GLQV
F-OE# to Output
Delay
2
30
30
30
30
ns
R5
t
PHQV
F-RP# to Output
Delay
150
150
150
150
ns
R6
t
ELQX
F-CE# to Output
in Low Z
3
0
0
0
0
ns
R7
t
GLQX
F-OE# to Output
in Low Z
3
0
0
0
0
ns
R8
t
EHQZ
F-CE# to Output
in High Z
3
20
20
20
20
ns
R9
t
GHQZ
F-OE# to Output
in High Z
3
20
20
20
20
ns
R10
t
OH
Output Hold from
Address, F-CE#,
or F-OE#
Change,
Whichever
Occurs First
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
See Figure 6 AC Waveform: Flash Read Operations
F-OE# may be delayed up to t
ELQV
–t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, but not 100% tested.
See Figure 4,
Input/Output Reference Waveform
for timing measurements and maximum allowable input slew rate.
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