- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F1602C3 (Intel Corp.) 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F1602C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數(shù)： | 39/62頁 |
| 文件大?。?/td> | 538K |
| 代理商： | 28F1602C3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁當(dāng)前第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁
E
28F1602C3, 28F3204C3
39
PRODUCT PREVIEW
S-V
SSQ
D10
SRAM DIE
FLASH DIE
SUBSTRATE
XX
S-X
F-X
Substrate connection to package ball
SRAM die bond pad connection
Flash die bond pad connection
S-V
CCQ
S-V
CC
S-V
SS
F-V
PP
F-V
SSQ
F-V
CC
F-V
CCQ
F-V
SS
H8
A9
D9
E4
D3
NOTES:
1.
2.
Substrate connections refer to ballout locations shown in Figure 1.
0.1
μ
f capacitors should be used with D9, D10 and E4.
Figure 13. Typical Flash+SRAM Substrate Power and Ground Connections
Figure 13 shows that the flash V
CC
and V
CCQ
lines
are tied together within the substrate; the diagram
also shows that the SRAM V
CC
and V
CCQ
lines are
ties together within the substrate of the package.
Because of this, it is highly recommended that
systems use a 0.1
μ
f capacitor for each of the D9,
D10, and E4 grid ballout locations (see Figure 1 for
ballout). These capacitors are necessary to avoid
undesired conditions created by excess noise.
11.4
Simultaneous Operation
The term simultaneous operation in used to
describe the ability to read or write to the SRAM
while also programming or erasing flash. In
addition, F-CE#, S-CS
# and S-CS should not be
enabled at the same time. Simultaneous operation
of the can be summarized by the following:
Flash Program or Erase Operations during and
SRAM read/write are allowed
Simultaneous Bus Operations between the
Flash and SRAM are
not
allowed (bus
contention)
11.4.1
SRAM OPERATION DURING FLASH
“BUSY”
This functionality provides the ability to use both the
flash and the SRAM
“at the same time” within a
system, similar to the operation of two devices with
separate footprints. This operation can be achieved
by following the appropriate timing constraints
within a system.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F3204C3 | 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級堆芯片封裝存儲器) |
| 28F1604C3 | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
| 28F800C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F160BJHE-BTLTH | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。