- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F1602C3 (Intel Corp.) 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F1602C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數(shù)： | 3/62頁 |
| 文件大?。?/td> | 538K |
| 代理商： | 28F1602C3 |
第1頁第2頁當(dāng)前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁
E
28F1602C3, 28F3204C3
3
PRODUCT PREVIEW
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION..............................................5
1.1 Product Overview.........................................5
2.0 PACKAGE BALLOUTS...................................6
3.0 STACKED CHIP SCALE PACKAGE
ORGANIZATION ............................................8
4.0 PRINCIPLES OF OPERATION .......................8
4.1 Bus Operation..............................................9
5.0 FLASH MEMORY MODES OF OPERATION 11
5.1 Read Array.................................................11
5.2 Read Configuration ....................................11
5.3 Read Status Register .................................12
5.4 Read Query................................................12
5.5 Program Mode ...........................................12
5.6 Erase Mode................................................13
6.0 FLASH MEMORY FLEXIBLE BLOCK
LOCKING .....................................................16
6.1 Locking Operation......................................16
6.2 Locked State..............................................16
6.3 Unlocked State...........................................16
6.4 Lock-Down State........................................16
6.5 Reading a Block’s Lock Status...................17
6.6 Locking Operation During Erase Suspend..17
6.7 Status Register Error Checking..................17
7.0 FLASH MEMORY 128-BIT PROTECTION
REGISTER ...................................................17
7.1 Reading the Protection Register.................18
7.2 Programming the Protection Register.........18
7.3 Locking the Protection Register..................19
8.0 FLASH MEMORY PROGRAM AND ERASE
VOLTAGES..................................................19
8.1 Improved 12 Volt Production Programming19
8.2 F-V
PP
≤
V
PPLK
for Complete Protection......19
9.0 ELECTRICAL SPECIFICATIONS..................20
9.1 Absolute Maximum Ratings........................20
9.2 Operating Conditions..................................20
9.3 Capacitance ...............................................21
9.4 DC Characteristics .....................................21
9.5 Flash AC Characteristics—Read
Operations—Extended Temperature.........25
9.6 Flash AC Characteristics—Write
Operations—Extended Temperature.........28
9.7 Flash Erase and Program Timings .............29
9.8 Flash Reset Operations..............................31
9.9 SRAM AC Characteristics—Read
Operations—Extended Temperature.........32
9.10 SRAM AC Characteristics—Write
Operations—Extended Temperature.........34
9.11 SRAM Data Retention Characteristics—
Extended Temperature..............................35
10.0 MIGRATION GUIDE INFORMATION ..........36
11.0 SYSTEM DESIGN CONSIDERATIONS.......36
11.1 Background..............................................36
11.2 Flash Control Considerations ...................37
11.3 Noise Reduction.......................................38
11.4 Simultaneous Operation...........................39
11.5 Printed Circuit Board Notes......................40
11.6 System Design Notes Summary...............40
12.0 ORDERING INFORMATION......................41
13.0 ADDITIONAL INFORMATION...................41
Appendix A: Program/Erase Flowcharts..........42
Appendix B: CFI Query Structure.....................47
Appendix C: Word-Wide Memory Map
Diagrams......................................................55
Appendix D: Device ID Table.............................57
Appendix E: Protection Register Addressing..58
Appendix F: Mechanical Specification.............59
Appendix G: Media Information........................61
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F3204C3 | 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級堆芯片封裝存儲器) |
| 28F1604C3 | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
| 28F800C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F160BJHE-BTLTH | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。