參數(shù)資料
型號(hào)： 28F1602C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
中文描述： 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器（3V的閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 48/62頁(yè)
文件大?。?/td> 538K
代理商： 28F1602C3
28F1602C3, 28F3204C3
E
48
PRODUCT PREVIEW
APPENDIX B
CFI QUERY STRUCTURE
This appendix defines the data structure or
“database” returned by the Common Flash Interface (CFI) Query
command. System software should parse this structure to gain critical information such as block size, density,
x8/x16, and electrical specifications. Once this information has been obtained, the software will know which
command sets to use to enable flash writes, block erases, and otherwise control the flash component. The
Query is part of an overall specification for multiple command set and control interface descriptions called
Common Flash Interface, or CFI.
B.1
QUERY STRUCTURE OUTPUT
The Query “database” allows system software to gain information for controlling the flash component. This
section describes the device’s CFI-compliant interface that allows the host system to access Query data.
Query data are always presented on the lowest-order data outputs (DQ
0-7
) only. The numerical offset value is
the address relative to the maximum bus width supported by the device. On this family of devices, the Query
table device starting address is a 10h, which is a word address for x16 devices.
For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and ”R” in ASCII, appear on the
low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00H data on upper bytes. Thus,
the device outputs ASCII “Q” in the low byte (DQ
0-7
) and 00h in the high byte (DQ
8-15
).
At Query addresses containing two or more bytes of information, the least significant data byte is presented
at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the “h” suffix
has been dropped. In addition, since the upper byte of word-wide devices is always “00h,” the leading “00”
has been dropped from the table notation and only the lower byte value is shown. Any x16 device outputs can
be assumed to have 00h on the upper byte in this mode.
Table B1. Summary of Query Structure Output As a Function of Device and Mode
Device
Hex
Offset
10:
11:
12:
Code
ASCII
Value
“Q”
“R”
“Y”
Device Addresses
51
52
59
相關(guān)PDF資料
PDF描述
28F3204C3 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器)
28F1604C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F160B3 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160BJHE-BTLTH 制造商: 功能描述: 制造商:undefined 功能描述:
28F160C3 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
28F160C3BA90 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述:
28F160C3TD70 制造商: 功能描述: 制造商:undefined 功能描述:
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