參數(shù)資料
型號: NZ48F4L0QTY
廠商: Intel Corp.
英文描述: StrataFlash Wireless Memory
中文描述: 無線的StrataFlash存儲器
文件頁數(shù): 87/106頁
文件大小: 1272K
代理商: NZ48F4L0QTY
Intel StrataFlash Wireless Memory (L18)
Datasheet
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
87
Figure 41.
Buffer Program Flowchart
Buffer Programming Procedure
Start
Get Next
Target Address
Issue Buffer Prog. Cmd.
0xE8,
Word Address
Read Status Register
at Word Address
Write Buffer
Available
SR[7] =
1 = Yes
Device
Supports Buffer
Writes
Set Timeout or
Loop Counter
Timeout
or Count
Expired
Write Confirm 0xD0
and Word Address
(Note 5)
Yes
No
Buffer Program Data,
Start Word Address
X = 0
0 = No
Yes
Use Single Word
Programming
Abort Buffer
Program
No
X = N
Write Buffer Data,
Word Address
X = X + 1
Write to another
Block Address
Buffer Program Aborted
No
Yes
Yes
Write Word Count,
Word Address
Suspend
Program
Loop
Read Status Register
(Note 7)
Is BP finished
SR[7] =
Full Status
Check if Desired
Program Complete
Suspend
Program
1=Yes
0=No
Yes
No
Issue Read
Status Register
Command
No
1. Word count value on D[7:0] is loaded into the word count
register. Count ranges for this device are N = 0x00 to 0x1F.
2. The device outputs the Status Register when read.
3. Write Buffer contents will be programmed at the issued word
address.
4. Align the start address on a Write Buffer boundary for
maximum programming performance (i.e., A[4:0] of the Start
Word Address = 0x00).
5. The Buffered Programming Confirm command must be
issued to an address in the same block, for example, the
original Start Word Address, or the last address used during the
loop that loaded the buffer data.
6. The Status Register indicates an improper command
sequence if the Buffer Program command is aborted; use the
Clear Status Register command to clear error bits.
7. The Status Register can be read from any addresses within
the programming partition.
Full status check can be done after all erase and write
sequences complete. Write 0xFF after the last operation to
place the partition in the Read Array state.
Bus
Operation
Idle
Read
Command
None
None
Write
Buffer Prog.
Setup
Read
None
Idle
None
Comments
Check SR[7]:
1 = WSM Ready
0 = WSM Busy
Status register Data
Addr = Note 7
Data = 0xE8
Addr = Word Address
SR[7] = Valid
Addr = Word Address
Check SR[7]:
1 = Write Buffer available
0 = No Write Buffer available
Write
(Notes 5, 6)
Buffer Prog.
Conf.
Data = 0xD0
Addr = Original Word Address
Write
(Notes 1, 2)
None
Data = N-1 = Word Count
N = 0 corresponds to count = 1
Addr = Word Address
Write
(Notes 3, 4)
None
Data = Write Buffer Data
Addr = Start Word Address
Write
(Note 3)
None
Data = Write Buffer Data
Addr = Word Address
O
a
p
0
a
相關(guān)PDF資料
PDF描述
NZ48F4L0QTZ StrataFlash Wireless Memory
NZD560A NPN Low Saturation Transistor
NZF220DFT1G EMI Filter with ESD Protection
NZF220TT1 EMI Filter with ESD Protection(帶ESD保護(hù)功能的EMI濾波器)
NZL5V1AXV3T1 Zener Voltage Regulators (SC-89 Dual Common Anode Zeners for ESD Protection)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NZ48F4L0QTZ 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
NZ600N18K 制造商:n/a 功能描述:Power Module
NZ9F10VST5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
NZ9F10VT5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
NZ9F11VST5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel