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參數(shù)資料
| 型號： | NZ48F4L0QTY |
| 廠商： | Intel Corp. |
| 英文描述： | StrataFlash Wireless Memory |
| 中文描述： | 無線的StrataFlash存儲器 |
| 文件頁數(shù)： | 76/106頁 |
| 文件大小： | 1272K |
| 代理商： | NZ48F4L0QTY |
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Intel StrataFlash Wireless Memory (L18)
April 2005
76
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Always clear the Status Register prior to resuming erase operations. This avoids Status Register
ambiguity when issuing commands during Erase Suspend. If a command sequence error occurs
during an erase-suspend state, the Status Register contains the command sequence error status
(SR[7,5,4] set). When the erase operation resumes and finishes, possible errors during the erase
operation cannot be detected via the Status Register because it contains the previous error status.
15.1.1
Clear Status Register
The Clear Status Register command clears the status register, leaving all partition read states
unchanged. It functions independent of V
PP
. The Write State Machine (WSM) sets and clears
SR[7,6,2,0], but it sets bits SR[5:3,1] without clearing them. The Status Register should be cleared
before starting a command sequence to avoid any ambiguity. A device reset also clears the Status
Register.
15.2
Read Device Identifier
The Read Device Identifier command instructs the addressed partition to output manufacturer
code, device identifier code, block-lock status, protection register data, or configuration register
data when that partition’s addresses are read (see
Section 9.2, “Device Commands” on page 47
for
details on issuing the Read Device Identifier command).
Table 17, “Device Identifier Information”
on page 77
and
Table 18, “Device ID codes” on page 77
show the address offsets and data values
for this device.
Issuing a Read Device Identifier command to a partition that is programming or erasing places that
partition in the Read Identifier state while the partition continues to program or erase in the
background.
5
Erase Status (ES)
0 = Erase successful.
1 = Erase fail or program sequence error when set with SR[4,7].
4
Program Status (PS)
0 = Program successful.
1 = Program fail or program sequence error when set with SR[5,7]
3
V
PP
Status (VPPS)
0 = VPP within acceptable limits during program or erase operation.
1 = VPP < VPPLK during program or erase operation.
2
Program Suspend Status
(PSS)
0 = Program suspend not in effect.
1 = Program suspend in effect.
1
Block-Locked Status
(BLS)
0 = Block not locked during program or erase.
1 = Block locked during program or erase; operation aborted.
0
Partition Write Status
(PWS)
DWS PWS
0
0
1
1
(Non-buffered EFP operation. For Buffered EFP operation, see
Section 11.3, “Buffered Enhanced Factory Programming” on
page 60
).
0 = Program or erase operation in addressed partition.
1 = Program or erase operation in other partition.
0 = No active program or erase operations.
1 = Reserved.
Table 16.
Status Register Description (Sheet 2 of 2)
Status Register (SR)
Default Value = 0x80
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NZ48F4L0QTZ | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory |
| NZ600N18K | 制造商:n/a 功能描述:Power Module |
| NZ9F10VST5G | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| NZ9F10VT5G | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| NZ9F11VST5G | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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