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參數(shù)資料
| 型號： | NZD560A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Low Saturation Transistor |
| 中文描述： | 3 A, 55 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | NZD560A |
2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
N
Absolute Maximum Ratings *
T
A
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
BV
CBO
Emitter-Base Breakdown Voltage
BV
EBO
Collector-Base Breakdown Voltage
I
CBO
Collector-Base Cutoff Current
* Pulse Test: Pulse width
≤
300
μ
s, Duty cycle
≤
2.0%
Parameter
Value
55
80
5
3
- 55 ~ +150
Units
V
V
V
A
°
C
- Continuous
Test Conditions
Min.
Typ.
Max.
Units
I
C
= 10mA, I
B
= 0
I
E
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 100
°
C
V
EB
= 4V, I
C
= 0
55
80
5
V
V
V
nA
μ
A
nA
100
10
10
I
EBO
On Characteristics *
h
FE
Emitter-Base Cutoff Current
DC Current Gain
I
C
= 100mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 3A, V
CE
= 2V
I
C
= 1A, V
CE
= 3V
I
C
= 1A, I
B
= 100mA
I
C
= 2A, I
B
= 200mA
I
C
= 1A, I
B
= 8mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 8mA
I
C
= 1A, V
CE
= 2V
70
250
80
25
200
550
V
CE
(sat)
Collector-Emitter Saturation Voltage
300
400
1.5
1.25
1
1
mV
mV
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
Small Signal Characteristics
C
obo
f
T
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 100mA, V
CE
= 5V,
f = 100MHz
30
pF
MHz
75
NZD560A
NPN Low Saturation Transistor
These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
Sourced from process NA.
1
1.Base 2.Collector 3.Emitter
D-PAK
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