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參數(shù)資料
| 型號： | NZ48F4L0QTY |
| 廠商： | Intel Corp. |
| 英文描述： | StrataFlash Wireless Memory |
| 中文描述： | 無線的StrataFlash存儲器 |
| 文件頁數(shù)： | 68/106頁 |
| 文件大?。?/td> | 1272K |
| 代理商： | NZ48F4L0QTY |
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Intel StrataFlash Wireless Memory (L18)
April 2005
68
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
If a block is locked or locked-down during an erase suspend of the
same
block, the lock status bits
change immediately. However, the erase operation completes when it is resumed. Block lock
operations cannot occur during a program suspend. See
Appendix A, “Write State Machine
(WSM)” on page 78
, which shows valid commands during an erase suspend.
13.2
Protection Registers
The device contains 17 Protection Registers (PRs) that can be used to implement system security
measures and/or device identification. Each Protection Register can be individually locked.
The first 128-bit Protection Register is comprised of two 64-bit (8-word) segments. The lower 64-
bit segment is pre-programmed at the factory with a unique 64-bit number. The other 64-bit
segment, as well as the other sixteen 128-bit Protection Registers, are blank. Users can program
these registers as needed. When programmed, users can then lock the Protection Register(s) to
prevent additional bit programming (see
Figure 29, “Protection Register Map” on page 69
).
The user-programmable Protection Registers contain one-time programmable (OTP) bits; when
programmed, register bits cannot be erased. Each Protection Register can be accessed multiple
times to program individual bits, as long as the register remains unlocked.
Each Protection Register has an associated Lock Register bit. When a Lock Register bit is
programmed, the associated Protection Register can only be read; it can no longer be programmed.
Additionally, because the Lock Register bits themselves are OTP, when programmed, Lock
Register bits cannot be erased. Therefore, when a Protection Register is locked, it cannot be
unlocked
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NZ48F4L0QTZ | StrataFlash Wireless Memory |
| NZD560A | NPN Low Saturation Transistor |
| NZF220DFT1G | EMI Filter with ESD Protection |
| NZF220TT1 | EMI Filter with ESD Protection(帶ESD保護(hù)功能的EMI濾波器) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NZ48F4L0QTZ | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory |
| NZ600N18K | 制造商:n/a 功能描述:Power Module |
| NZ9F10VST5G | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| NZ9F10VT5G | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| NZ9F11VST5G | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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