參數(shù)資料
型號(hào)： NZ48F4L0QTY
廠商： Intel Corp.
英文描述： StrataFlash Wireless Memory
中文描述： 無(wú)線的StrataFlash存儲(chǔ)器
文件頁(yè)數(shù)： 27/106頁(yè)
文件大?。?/td> 1272K
代理商： NZ48F4L0QTY
Intel StrataFlash Wireless Memory (L18)
Datasheet
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
27
6.2
DC Voltage Characteristics
I
PPR
V
PP
Read
2
15
0.10
22
0.10
22
μA
V
PP
≤
V
CC
V
PP
= V
PPL,
program in progress
V
PP
= V
PPH,
program in progress
V
PP
= V
PPL,
erase in progress
V
PP
= V
PPH,
erase in progress
1,3
I
PPW
V
PP
Program Current
0.05
8
0.05
8
mA
I
PPE
V
PP
Erase Current
mA
Notes:
1.
2.
3.
4.
5.
6.
All currents are RMS unless noted. Typical values at typical V
, T
= +25°C.
I
is the average current measured over any 5 ms time interval 5 μs after CE# is deasserted.
Sampled, not 100% tested.
V
CC
read + program current is the sum of V
read and V
program currents.
V
CC
read + erase current is the sum of V
read and V
erase currents.
I
is specified with the device deselected. If device is read while in erase suspend, current is I
CCES
plus I
CCR
I
, I
measured over typical or max times specified in
Section 7.7, “Program and Erase
Characteristics” on page 41
7.
Sym
Parameter
V
CCQ
1.35 V – 2.0 V
1.7 V – 2.0 V
Unit
Test Condition
Notes
Min
Max
Min
Max
V
IL
Input Low Voltage
0
0.2
0
0.4
V
1
V
IH
Input High Voltage
V
CCQ
– 0.2
V
CCQ
V
CCQ
– 0.4
V
CCQ
V
1
V
OL
Output Low Voltage
-
0.1
-
0.1
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
= 100 μA
V
OH
Output High Voltage
V
CCQ
– 0.1
-
V
CCQ
– 0.1
-
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
= –100 μA
V
PPLK
V
PP
Lock-Out Voltage
-
0.4
-
0.4
V
2
V
LKO
V
CC
Lock Voltage
1.0
-
1.0
-
V
V
LKOQ
V
CCQ
Lock Voltage
0.9
-
0.9
-
V
NOTES:
1.
2.
V
IL
can undershoot to –0.4 V and V
IH
can overshoot to V
CCQ
+ 0.4 V for durations of 20 ns or less.
V
PP
≤
V
PPLK
inhibits erase and program operations. Do not use V
PPL
and V
PPH
outside their valid ranges.
Sym
Parameter
V
CCQ
1.7 V – 2.0 V
1.35 V - 2.0 VUnit
Typ
Max
Test Conditions
Notes
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