參數(shù)資料
型號(hào): NZ48F4L0QTY
廠商: Intel Corp.
英文描述: StrataFlash Wireless Memory
中文描述: 無(wú)線的StrataFlash存儲(chǔ)器
文件頁(yè)數(shù): 20/106頁(yè)
文件大?。?/td> 1272K
代理商: NZ48F4L0QTY
Intel StrataFlash Wireless Memory (L18)
April 2005
20
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
VCC
Power
Device Core Power Supply:
Core (logic) source voltage. Writes to the flash array are inhibited when
V
CC
V
LKO
. Operations at invalid V
CC
voltages should not be attempted.
VCCQ
Power
Output Power Supply:
Output-driver source voltage. This ball can be tied directly to V
CC
if operating
within V
CC
range.
VSS
Power
Ground:
Ground reference for device logic voltages. Connect to system ground.
VSSQ
Power
Ground:
Ground reference for device output voltages. Connect to system ground.
DU
Do Not Use:
Do not use this ball. This ball should not be connected to any power supplies, signals or
other balls, and must be left floating.
RFU
Reserved for Future Use:
Reserved by Intel for future device functionality and enhancement.
Table 1.
Signal Descriptions (Sheet 2 of 2)
Symbol
Type
Name and Function
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NZ48F4L0QTZ 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
NZ600N18K 制造商:n/a 功能描述:Power Module
NZ9F10VST5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
NZ9F10VT5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
NZ9F11VST5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel