參數(shù)資料
型號： MT28F160S3
廠商： Micron Technology, Inc.
英文描述： 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器)
中文描述： 2梅格× 8 /檢測起× 16智能3閃光（2 M中的x 8月1日M中的x 16閃速存儲器）
文件頁數(shù)： 9/39頁
文件大?。?/td> 281K
代理商： MT28F160S3
9
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
QUERY STRUCTURE OUTPUT
The query data structure allows system software to
gain critical information for controlling the flash de-
vice. The device’s CFI-compliant interface allows the
host system to access query data.
Query data is always located on the lowest-order
data outputs (DQ0-DQ7) only. The numerical offset
value is the address relative to the maximum bus width
supported by the device. Since the maximum bus width
is x16, the query table device starting address is a 10h
word address. (See Tables 3 and 4.)
For x16 organization, the first two bytes of the query
structure, “Q” and “R” in ASCII, appear on the low byte
at word addresses 10h and 11h. This CFI-compliant
device outputs 00h data on upper bytes, thus making
the device output ASCII “Q” on the low byte (DQ0-
DQ7) and 00h on the high byte (DQ8-DQ15).
Because the device is either x8 or x16 capable, the x8
data is still presented in word-relative (16-bit) addresses.
However, the “fill data” (00h) will be driven by the
upper bytes in the x16 mode. As in x16 mode, the byte
address (A0) is ignored for query output so that the
“odd byte address” (A0 HIGH) repeats the “even byte
address” data (A0 LOW). Therefore, in x8 mode, using
byte addressing, the device will output the sequence “Q,
Q, R, R, Y, Y,” and so on, beginning at byte-relative
address 20h. Note that the least significant data byte is
presented at the lower address, and the most significant
data byte is presented at the higher address.
Table 4
Example of Query Structure Output
DEVICE
A DDRESS
A 16–A 1
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
WORD ADDRESSING:
QUERY DATA
DQ15–DQ0
0051h
0052h
0059h
P_IDLO
P_IDHI
PLO
PHI
A_IDLO
A_IDHI
...
BY TE
BY TE ADDRESSING:
QUERY DATA
DQ7–DQ0
51h
51h
52h
52h
59h
59h
P_IDLO
P_IDLO
P_IDHI
...
A 7–A 0
20h
21h
22h
23h
24h
25h
26h
27h
28h
...
“ Q”
“ R”
“Y”
“ Q”
“ Q”
“ R”
“ R”
“Y”
“Y”
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
PrVendor
ID #
“
ID #
Table 3
Summary of Query Structure Output
WORD ADDRESSING
LOCA TION
BY TE ADDRESSING
LOCA TION
DEVICE TYPE/
MODE
x16 device/
x16 mode
QUERY DATA
HEX
0051h
0052h
0059h
N/A
QUERY DATA
HEX
51h
00h
52h
51h
51h
52h
A SCII
“ Q”
“ R”
“Y”
A SCII
“ Q”
null
"R"
“ Q”
“ Q”
“ R”
10h
11h
12h
N/A
1
20h
21h
22h
20h
21h
22h
x16 device/
x8 mode
NOTE:
1. The system must drive the lowest order addresses to access all the device’s array data
when the device is configured in x8 mode. Therefore, word addressing where lower
addresses are not toggled by the system is “ Not Applicable” for x8-configured devices.
相關PDF資料
PDF描述
MT28F640J3 64Mb Flash Memory(64Mb閃速存儲器)
MT35212A BELL 212A/CCITT V.22 Modem Filter
MT35212AE BELL 212A/CCITT V.22 Modem Filter
MT35212AP BELL 212A/CCITT V.22 Modem Filter
MT46V32M16TG-8L DOUBLE DATA RATE DDR SDRAM
相關代理商/技術參數(shù)
參數(shù)描述
MT28F200B3 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH MEMORY
MT28F200B5 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH MEMORY
MT28F200B5SG-6 B 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray
MT28F200B5SG-6 T 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray
MT28F200B5SG-8 B TR 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 80ns 44-Pin SOP T/R
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*