參數(shù)資料
型號: MT28F160S3
廠商: Micron Technology, Inc.
英文描述: 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器)
中文描述: 2梅格× 8 /檢測起× 16智能3閃光(2 M中的x 8月1日M中的x 16閃速存儲器)
文件頁數(shù): 14/39頁
文件大小: 281K
代理商: MT28F160S3
14
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
MICRON-SPECIFIC EXTENDED QUERY
TABLE
Table 10 specifies Micron-Specific Extended Query.
Some flash features and commands are optional.
NOTE:
1. The variable “ P” is a pointer which is defined at offset 15h in Table 7.
Table 10
Primary Vendor-Specific Extended Query
OFFSET
LENGTH
(BY TES)
03h
DESCRIPTION
DA TA
(P)h
Primary Extended Query Table
Unique ASCII String “PRI“
31: 0050h
32: 0052h
33: 0049h
34: 0031h
35: 0030h
36: 000Fh
37: 0000h
38: 0000h
39: 0000h
(P+3)h
(P+4)h
(P+5)h
01h
01h
04h
Major Version Number, ASCII
Minor Version Number, ASCII
Optional Feature and Command Support
Bit 0 Chip Erase Supported = yes = 1
Bit 1 Suspend Erase Supported = yes = 1
Bit 2 Suspend Program Supported = yes = 1
Bit 3 Lock/Unlock Supported = yes = 1
Bit 4 Queued Erase Supported = no = 0
Bits 5-31 Reserved for Future Use; undefined bits are “0”
Functions Supported After Suspend
Read array, status, and query are always supported during
suspended erase or program operation. This field defines
other operations supported.
Bit 0 Program Supported After Erase Suspend = yes = 1
Bits 1-7 Reserved for Future Use; undefined bits are “0”
Block Status Register Mask
Defines which bits in the block status register section of
query are implemented.
Bit 0 Block Status Register Lock Bit [BSR0] Active = yes = 1
Bit 1 Block Erase Status Bit [BSR1] Active = yes = 1
Bits 2-15 Reserved for Future Use; undefined bits are “0”
V
CC
Logic Supply Optimum Program/Erase Voltage (highest
performance)
Bits 7–4 BCD value in volts
Bits 3–0 BCD value in 100mV
V
PP
[Programming] Supply Optimum Program/Erase Voltage
Bits 7–4 HEX value in volts
Bits 3–0 BCD value in 100mV
Reserved for Future Use
(P+9)h
01h
3A: 0001h
(P+A)
02h
3B: 0003h
3C: 0000h
(P+C)h
01h
3D: 0050h
(P+D)h
01h
3E: 0050h
(P+E)h
Reserved
相關(guān)PDF資料
PDF描述
MT28F640J3 64Mb Flash Memory(64Mb閃速存儲器)
MT35212A BELL 212A/CCITT V.22 Modem Filter
MT35212AE BELL 212A/CCITT V.22 Modem Filter
MT35212AP BELL 212A/CCITT V.22 Modem Filter
MT46V32M16TG-8L DOUBLE DATA RATE DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT28F200B3 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH MEMORY
MT28F200B5 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH MEMORY
MT28F200B5SG-6 B 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray
MT28F200B5SG-6 T 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray
MT28F200B5SG-8 B TR 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 80ns 44-Pin SOP T/R