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參數(shù)資料
| 型號(hào)： | MT28F160S3 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲(chǔ)器) |
| 中文描述： | 2梅格× 8 /檢測(cè)起× 16智能3閃光（2 M中的x 8月1日M中的x 16閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 12/39頁(yè) |
| 文件大?。?/td> | 281K |
| 代理商： | MT28F160S3 |
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12
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
Table 8
System Interface Information
OFFSET
LENGTH
(BY TES)
01h
DESCRIPTION
VA LUE
1Bh
V
CC
Logic Supply Minimum Program/Erase Voltage
Bits 7–4 BCD volts
Bits 3–0 BCD 100mV
V
CC
Logic Supply Maximum Program/Erase Voltage
Bits 7–4 BCD volts
Bits 3–0 BCD 100mV
V
PP
[Programming] Supply Minimum
Program/Erase Voltage
Bits 7–4 HEX volts
Bits 3–0 BCD 100mV
V
PP
[Programming] Supply Maximum
Program/EraseVoltage
Bits 7–4 HEX volts
Bits 3–0 BCD 100mV
Typical Timeout per Single Byte/
Word Program, 2
n
μsec
Typical Timeout for Max. Buffer
Write, 2
n
μsec
Typical Timeout per Individual
Block Erase, 2
n
msec
Typical Timeout for Full
Chip Erase, 2
n
msec
Maximum Timeout for Byte/Word
Program, 2
n
Times Typical
Maximum Timeout for Buffer Write,
2
n
Times Typical
Maximum Timeout per Individual
Block Erase, 2
n
Times Typical
Maximum Timeout for Full Chip
Erase, 2
n
Times Typical
1B: 0027h
1Ch
01h
1C: 0055h
1Dh
01h
1D: 0027h
1Eh
01h
1E:
0055h
1Fh
01h
1F:
(2
3
= 8)
20:
(2
6
= 64)
21:
(0Ah = 10d, 2
10
= 1,024)
22:
000Fh
(0Fh = 15d, 2
15
= 32,768)
23:
0004h
(2
4
= 16, 16 x Typical)
24:
0004h
(2
4
= 16, 16 x Typical)
25:
0004h
(2
4
= 16, 16 x Typical)
26:
0004h
(2
4
= 16, 16 x Typical)
0003h
20h
01h
0006h
21h
01h
000Ah
22h
01h
23h
01h
24h
01h
25h
01h
26h
01h
SYSTEM INTERFACE INFORMATION
Table 8 provides useful information to optimize the
system interface software.
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