參數(shù)資料
型號: MT28F160S3
廠商: Micron Technology, Inc.
英文描述: 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器)
中文描述: 2梅格× 8 /檢測起× 16智能3閃光(2 M中的x 8月1日M中的x 16閃速存儲器)
文件頁數(shù): 13/39頁
文件大?。?/td> 281K
代理商: MT28F160S3
13
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
DEVICE GEOMETRY DEFINITION
This table provides critical details of the device
geometry.
Table 9
Device Geometry Definition
OFFSET
LENGTH
(BY TES)
01h
DESCRIPTION
VA LUE
27h
Device Size = 2
n
in number of bytes
(15h = 21d, 2
21
=
2,097,152 bytes =
2MB = 16Mb)
28: 0002h
29: 0000h
28h
02h
Flash Device Interface Description:
Value
Meaning
0002h
x8/x16 asynchronous
Maximum Number of Bytes in Write Buffer
= 2
n
2Ah
02h
2A: 0005h
2B: 0000h
(2
5
= 32)
2C: 0001h
2Ch
01h
Number of Erase Block Regions Within
Device:
Bits 7–0 = x = number of regions within the
device containing one or more contiguous
erase blocks of the same size
Erase Block Region Information:
Bits 15–0 = y, where y + 1 = number of
erase blocks of identical size within region.
Bits 31–16 = z, where the erase block(s)
within this region are z × 256 bytes and z is
the number of 256-byte clusters in an
erase block.
2Dh
04h
y:
2D: 001Fh
2E: 0000h
(1Fh + 1 = 32 blocks)
2F: 0000h
30: 0001h
(100h = 256, 256 x 256 = 64KB)
z:
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