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參數(shù)資料
| 型號(hào)： | M58WR064KU70ZA6U |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封裝： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件頁(yè)數(shù)： | 77/122頁(yè) |
| 文件大?。?/td> | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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Program and erase times and endurance cycles
M58WRxxxKU, M58WRxxxKL
12
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in Table 18. In the M58WRxxxKU/L the maximum number of program/ erase cycles depends
on the voltage supply used.
Table 18.
Program and erase times and endurance cycles(1)
Parameter
Condition
Min
Typ
Typical
after 100k
W/E Cycles
Max
Unit
V
PP
=
V
DD
Erase
Parameter block (4 Kword)(2)
0.3
1
2.5
s
Main block (32
Kword)
Preprogrammed
0.8
3
4
s
Not preprogrammed
1
4
s
Program(3)
Word
12
100
s
Parameter block (4 Kword)
40
ms
Main block (32 Kword)
300
ms
Suspend latency
Program
5
10
s
Erase
5
20
s
Program/erase
cycles (per block)
Main blocks
100,000
cycles
Parameter blocks
100,000
cycles
V
PP
=
V
PPH
Erase
Parameter block (4 Kword)
0.25
2.5
s
Main block (32 Kword)
0.8
4
s
Program(3)
Word/double word/quadruple word(4)
10
100
s
Parameter
block (4 Kword)
Quad-enhanced factory
11
ms
Enhanced factory
45
ms
Quadruple word(4)
10
ms
Word
40
ms
Main block
(32 Kword)
Quad-enhanced factory
94
ms
Enhanced factory
360
ms
Quadruple word(4)
80
ms
Word
328
ms
Bank (4-Mbit)
Quad-enhanced factory(4)
0.75
s
Quadruple word(4)
0.65
s
Program/erase
cycles (per block)
Main blocks
1000 cycles
Parameter blocks
2500 cycles
1.
TA = –40 to 85°C; VDD = VDDQ = 1.7 V to 2 V.
2.
The difference between preprogrammed and not preprogrammed is not significant (30 ms).
3.
Values are liable to change with the external system-level overhead (command sequence and status register polling
execution).
4.
Measurements performed at 25°C. TA = 30°C ±10°C for quadruple word, double word and quadruple enhanced factory
program.
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相關(guān)代理商/技術(shù)參數(shù) |
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| M58WR064T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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