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參數(shù)資料
| 型號(hào)： | M58WR064KU70ZA6U |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封裝： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件頁(yè)數(shù)： | 56/122頁(yè) |
| 文件大?。?/td> | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Status register
39/123
7.3
Erase status bit (SR5)
The erase status bit identifies if the memory has failed to verify that the block has erased
correctly. When the erase status bit is High (set to ‘1’), the program/erase controller has
applied the maximum number of pulses to the block and still failed to verify that it has
erased correctly. The erase status bit should be read once the program/erase controller
status bit is High (program/erase controller inactive).
Once set High, the erase status bit can only be reset Low by a Clear Status Register
command or a hardware reset. If set High it should be reset before a new program or erase
command is issued, otherwise the new command appears to fail.
7.4
Program status bit (SR4)
The program status bit identifies either a program failure or an attempt to program a ‘1’ to an
already programmed bit when VPP = VPPH.
When the program status bit goes High (set to ‘1’) after a program failure, the
program/erase controller has applied the maximum number of pulses to the byte and still
failed to verify that it has programmed correctly.
After an attempt to program a ‘1’ to an already-programmed bit, the program status bit SR4
only goes High (set to ’1’) if VPP = VPPH (if VPP ≠ VPPH, SR4 remains Low (set to ‘0’) and the
attempt is not shown).
The program status bit should be read once the program/erase controller status bit is High
(program/erase controller inactive).
Once set High, the program status bit can only be reset Low by a Clear Status Register
command or a hardware reset. If set High it should be reset before a new command is
issued, otherwise the new command appears to fail.
7.5
VPP status bit (SR3)
The VPP status bit identified an invalid voltage on the VPP pin during program and erase
operations. The VPP pin is only sampled at the beginning of a program or erase operation.
Indeterminate results can occur if VPP becomes invalid during an operation.
When the VPP status bit is Low (set to ‘0’), the voltage on the VPP pin was sampled at a valid
voltage; when the VPP Status bit is High (set to ‘1’), the VPP pin has a voltage that is below
the VPP lockout voltage, VPPLK, the memory is protected and program and erase operations
cannot be performed.
Once set High, the VPP status bit can only be reset Low by a Clear Status Register
command or a hardware reset. If set High it should be reset before a new program or erase
command is issued, otherwise the new command appears to fail.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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