- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296408 > M58WR064KU70ZA6U (NUMONYX) 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 PDF資料下載
參數(shù)資料
| 型號(hào)： | M58WR064KU70ZA6U |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封裝： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件頁(yè)數(shù)： | 3/122頁(yè) |
| 文件大?。?/td> | 2187K |
| 代理商： | M58WR064KU70ZA6U |
第1頁(yè)第2頁(yè)當(dāng)前第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)
Common flash interface
M58WRxxxKU, M58WRxxxKL
Table 45.
Bank and erase block region 1 information(1)
M58WR016KU,
M58WR032KU,
M58WR064KU
M58WR016KL,
M58WR032KL,
M58WR064KL
Description
Offset
Data
Offset
Data
(P+1A)h = 53h
03h(2)
07h(3)
0Fh(4)
(P+1A)h = 53h
01h
Number of identical banks within Bank Region 1
(P+1B)h = 54h
00h
(P+1B)h = 54h
00h
(P+1C)h = 55h
11h
(P+1C)h = 55h
11h
Number of program or erase operations allowed in Bank
Region 1:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1D)h = 56h
00h
(P+1D)h = 56h
00h
Number of program or erase operations allowed in other
banks while a bank in same region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1E)h = 57h
00h
(P+1E)h = 57h
00h
Number of program or erase operations allowed in other
banks while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1F)h = 58h
01h
(P+1F)h = 58h
02h
Types of erase block regions in Bank Region 1
n = number of erase block regions with contiguous same-
size erase blocks.
Symmetrically blocked banks have one blocking region.(5)
(P+20)h = 59h
07h
(P+20)h = 59h
07h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+21)h = 5Ah
00h
(P+21)h = 5Ah
00h
(P+22)h = 5Bh
00h
(P+22)h = 5Bh
20h
(P+23)h = 5Ch
01h
(P+23)h = 5Ch
00h
(P+24)h = 5Dh
64h
(P+24)h = 5Dh
64h
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+25)h = 5Eh
00h
(P+25)h = 5Eh
00h
(P+26)h = 5Fh
01h
(P+26)h = 5Fh
01h
Bank Region 1 (Erase Block Type 1): bits per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved 5Eh 01 5Eh 01
(P+27)h = 60h
03h
(P+27)h = 60h
03h
Bank Region 1 (Erase Block Type 1): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5L28FGNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L15TGNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M5L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。