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| 型號(hào)： | M58WR064KU70ZA6U |
| 廠(chǎng)商： | NUMONYX |
| 元件分類(lèi)： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封裝： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件頁(yè)數(shù)： | 54/122頁(yè) |
| 文件大?。?/td> | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Command interface - factory program commands
37/123
Table 9.
Factory program commands (1)
Command
Phase
Cyc
les
Bus write operations
1st
2nd
3rd
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Double Word Program(2)
3
BKA or
WA1(3)
35h
WA1
PD1
WA2
PD2
Quadruple Word
Program(4)
5
BKA or
WA1(3)
56h
WA1
PD1
WA2
PD2
WA3
PD3
WA4
PD4
Enhanced
Factory
Program (5)
Setup,
Program
2+n
+1
BKA or
WA1(3)
30h
BA or
WA1(6)
D0h
WA1(7) PD1
WAn(8) PAn
NOT
WA1(7))
FFFF
h
Verify, Exit
n+1
WA1(7)
PD1
WAn(8) PAn
NOT
WA1(7)
FFFF
h
Quadruple
Enhanced
Factory
Program
Setup,
first Load
5
BKA or
WA1(3)
75h
WA3(9) PD3
WA4(9)
PD4
First
Program &
Verify
Automatic
Subsequent
Loads
4WA1i(7)
PD1i
WA2i
PD2i
WA3i
PD3i
WA4i(9)
PD4i
Subsequent
Program &
Verify
Automatic
Exit
1
NOT
WA1(7)
FFFFh
1.
WA = Word Address in targeted bank, BKA = Bank Address, PD = Program Data, BA = Block Address.
2.
Word Addresses 1 and 2 must be consecutive addresses differing only for A0.
3.
Any address within the bank can be used.
4.
Word addresses 1,2,3 and 4 must be consecutive addresses differing only for A0 and A1.
5.
A bus read must be done between each write cycle where the data is programmed or verified to read the status register and
check that the memory is ready to accept the next data. n = number of words, i = number of pages to be programmed.
6.
Any address within the block can be used.
7.
WA1 is the start address. NOT WA1 is any address that is not in the same block as WA1.
8.
Address can remain starting address WA1 or be incremented.
9.
Address is only checked for the first word of each page as the order to program the words in each page is fixed so
subsequent words in each page can be written to any address.
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相關(guān)代理商/技術(shù)參數(shù) |
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| M58WR064T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
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