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參數(shù)資料
| 型號(hào)： | M58WR064KU70ZA6U |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封裝： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件頁(yè)數(shù)： | 21/122頁(yè) |
| 文件大?。?/td> | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Command interface state tables
117/123
EFP
Setup
Ready (error)
EFP Busy
Ready (error)
Busy
EFP Busy(6)
Verify
EFP Verify(6)
Quad
EFP
Setup
Quad EFP Busy(6)
Busy
Quad EFP Busy(6)
1.
CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple
Enhanced Factory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = program/erase
Controller, PS = program suspend, ES = erase suspend, IS = Illegal state.
2.
At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined
data output.
3.
The two cycle command should be issued to the same bank address.
4.
If the P/EC is active, both cycles are ignored.
5.
The Clear Status Register command clears the status register error bits except when the P/EC is busy or suspended.
6.
EFP and Quad EFP are allowed only when status register bit SR0 is set to ‘0’.EFP and Quad EFP are busy if Block
Address is first EFP Address. Any other commands are treated as data.
Table 47.
Command interface states - modify table, next state(1) (continued)
Current CI State
Command Input
Read
Array(2)
(FFh)
WP
setup(3)(4)
(10/40h)
DWP,
QWP
Setup(3)(4)
(35h, 56h)
Block
Erase
Setup(3)(4)
(20h)
EFP
Setup
(30h)
Quad-EFP
Setup
(75h)
Erase
Confirm, P/E
Resume,
Block Unlock
confirm, EFP
Confirm
(D0h)
Program/
Erase
Suspend
(B0h)
Read
Status
Register
(70h)
Clear
Status
Register
(5)
(50h)
Read
Electronic
signature,
Read CFI
Query
(90h, 98h)
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| M58WR064T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
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