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參數(shù)資料
| 型號： | M58WR064KU70ZA6U |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封裝： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件頁數(shù)： | 48/122頁 |
| 文件大?。?/td> | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Command interface - factory program commands
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6
Command interface - factory program commands
The factory program commands speed up programming. They require VPP to be at VPPH.
Refer to Table 9: Factory program commands in conjunction with the information in the
following sections.
6.1
Double Word Program command
The Double Word Program command improves the programming throughput by writing a
page of two adjacent words in parallel. The two words must differ only for the address
ADQ0. If the block is protected then the double word program operation aborts, the data in
the block does not change, and the status register outputs the error.
If programming is attempted with VPP ≠ VPPH, the command is ignored.
Three bus write cycles are necessary to issue the Double Word Program command.
●
The first bus cycle sets up the Double Word Program command.
●
The second bus cycle latches the address and the data of the first word to be written.
●
The third bus cycle latches the address and the data of the second word to be written
and starts the program/erase controller.
Read operations in the bank being programmed output the status register content after the
programming has started.
During double word program operations the bank being programmed only accepts the Read
Array, Read Status Register, Read Electronic Signature and Read CFI Query commands;
all other commands are ignored. Dual operations are not supported during double word
program operations and the command cannot be suspended. Typical program times are
Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the
program operation is aborted, the memory locations must be reprogrammed.
flowchart for using the Double Word Program command.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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