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參數(shù)資料
| 型號： | HYB18L128160BF-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | 針對移動應用的DRAM |
| 文件頁數(shù)： | 9/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BF-75 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Overview
Data Sheet
9
V1.4, 2004-04-30
1.3
Description
The HY[B/E]18L128160B[C/F] is a high-speed CMOS, dynamic random-access memory containing
134,217,728
bits. It is internally configured as a quad-bank DRAM.
The HY[B/E]18L128160B[C/F] achieves high speed data transfer rates by employing a chip architecture that
prefetches multiple bits and then synchronizes the output data to the system clock. Read and write accesses are
burst-oriented; accesses start at a selected location and continue for a programmed number of locations (1, 2, 4,
8 or full page) in a programmed sequence.
The device operation is fully synchronous: all inputs are registered at the positive edge of CLK.
The HY[B/E]18L128160B[C/F] is especially designed for mobile applications. It operates from a 1.8V power
supply. Power consumption in self refresh mode is drastically reduced by an On-Chip Temperature Sensor
(OCTS); it can further be reduced by using the programmable Partial Array Self Refresh (PASR).
A conventional data-retaining Power-Down (PD) mode is available as well as a non-data-retaining Deep Power-
Down (DPD) mode.
The HY[B/E]18L128160B[C/F] is housed in a 54-ball P-VFBGA package. It is available in Commercial (0
°
C to
70
°
C) and Extended (-25
°
C to +85
°
C) temperature range.
Figure 2
Functional Block Diagram
CKE
CLK
CS
RAS
CAS
WE
A
R
1
12
1
R
C
D
Mode
Registers
C
B
R
&
12
B
Column Address
Counter / Latch
9
Bank 0
Memory Array
(4096 x 512 x 16)
Sense Amplifier
4096
IO Gating
DQM Mask Logic
Column
Decoder
9
14
A0-A11
BA0,BA1
16
DQ0-
DQ15
Data
Output
Reg.
Data
Input
Reg.
16
LDQM
UDQM
Bank 1Bank 2Bank 3
2
2
2
2
相關PDF資料 |
PDF描述 |
|---|---|
| HYB18L128160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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