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| 型號： | HYB18L128160BF-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | 針對移動應用的DRAM |
| 文件頁數(shù)： | 24/53頁 |
| 文件大小： | 1328K |
| 代理商： | HYB18L128160BF-75 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
24
V1.4, 2004-04-30
Figure 14
Single READ Burst (CAS Latency = 3)
Data from any READ burst may be concatenated with data from a subsequent READ command. In either case, a
continuous flow of data can be maintained. A READ command can be initiated on any clock cycle following a
previous READ command, and may be performed to the same or a different (active) bank. The first data element
from the new burst follows either the last element of a completed burst (
Figure 15
) or the last desired data element
of a longer burst which is being truncated (
Figure 16
). The new READ command should be issued x cycles after
the first READ command, where x equals the number of desired data elements.
Figure 15
Consecutive READ Bursts
Ba A, Col n = bank A, column n
DO n = Data Out from column n
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n.
= Don't Care
CL=3
t
RCD
t
RP
t
RAS
t
RC
Command
NOP
READ
NOP
NOP
NOP
PRE
NOP
ACT
ACT
NOP
NOP
CLK
AP = Auto Precharge
Dis AP = Disable Auto Precharge
Address
A10 (AP)
Pre Bank A
Pre All
AP
Dis AP
DQ
DO n+1
DO n
DO n+2
DO n+3
Ba A,
Row b
Row b
Ba A,
Row x
Row x
Ba A,
Col n
Ba A, Col n (b) = Bank A, Column n (b)
DO n (b) = Data Out from column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n (b).
= Don't Care
CLK
CL=2
CL=3
Command
NOP
READ
NOP
NOP
NOP
NOP
NOP
READ
NOP
Address
Ba A,
Col b
Ba A,
Col n
DQ
DO n+1
DO n
DO n+2
DO n+3
DO b+2
DO b
DO b+1
DQ
DO n+1
DO n
DO n+2
DO n+3
DO b+1
DO b
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| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
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| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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