- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370745 > HYB18L128160BF-75 (INFINEON TECHNOLOGIES AG) ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% PDF資料下載
參數(shù)資料
| 型號： | HYB18L128160BF-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | 針對移動應(yīng)用的DRAM |
| 文件頁數(shù)： | 29/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BF-75 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當(dāng)前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
29
V1.4, 2004-04-30
2.4.6
WRITE
Figure 23
WRITE Command
WRITE bursts are initiated with a WRITE command, as shown in
Figure 23
. Basic timings for the DQs are shown
in
Figure 24
; they apply to all write operations.
The starting column and bank addresses are provided with the WRITE command, and Auto Precharge is either
enabled or disabled for that access. If Auto Precharge is enabled, the row being accessed is precharged at the
completion of the write burst. For the generic WRITE commands used in the following illustrations, Auto Precharge
is disabled.
Figure 24
Basic WRITE Timing Parameters for DQs
During WRITE bursts, the first valid data-in element is registered coincident with the WRITE command, and
subsequent data elements are registered on each successive positive edge of CLK. Upon completion of a burst,
assuming no other commands have been initiated, the DQs remain in High-Z state, and any additional input data
is ignored.
Figure 25
and
Figure 26
show a single WRITE burst for each supported CAS latency setting.
BA0,BA1
BA
CS
CKE
(High)
CLK
RAS
CAS
A0-A8
CA
= Don't Care
BA = Bank Address
CA = Column Address
AP = Auto Precharge
A10
AP
Disable AP
Enable AP
WE
CLK
= Don't Care
t
IS
t
IH
t
IS
t
IH
DQM
DQ
DI n
DI n+2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L128160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。