參數(shù)資料
型號(hào)： HYB18L128160BF-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
中文描述： 針對(duì)移動(dòng)應(yīng)用的DRAM
文件頁(yè)數(shù)： 11/53頁(yè)
文件大小： 1328K
代理商： HYB18L128160BF-75
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
11
V1.4, 2004-04-30
2
Functional Description
The 128-Mbit Mobile-RAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits.
It is internally configured as a quad-bank DRAM.
READ and WRITE accesses to the Mobile-RAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration
of an ACTIVE command, followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the banks, A0 - A11
select the row). The address bits registered coincident with the READ or WRITE command are used to select the
starting column location for the burst access.
Prior to normal operation, the Mobile-RAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command description and device operation.
2.1
Power On and Initialization
The Mobile-RAM must be powered up and initialized in a predefined manner (see
Figure 3
). Operational
procedures other than those specified may result in undefined operation.
Figure 3
Power-Up Sequence and Mode Register Sets
Power-up:
VDD and CK stable
Load
Mode
Register
Load
Ext.
Mode
Register
= Don't Care
BA0=L
BA1=H
t
RFC
t
RFC
t
MRD
t
MRD
t
RP
200μs
t
CK
All
Banks
DQ
(High-Z)
DQM
BA0,BA1
NOP
BA
A10
CODE
NOP
RA
CODE
Address
CODE
NOP
RA
CODE
Command
PRE
ARF
ARF
MRS
NOP
NOP
ACT
MRS
CLK
BA0=L
BA1=L
(H Level)
VDD
VDDQ
CKE
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