參數(shù)資料
型號: HYB18L128160BF-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
中文描述: 針對移動應(yīng)用的DRAM
文件頁數(shù): 41/53頁
文件大?。?/td> 1328K
代理商: HYB18L128160BF-75
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
41
V1.4, 2004-04-30
2.4.9.2
SELF REFRESH
Figure 43
SELF REFRESH Entry Command
The SELF REFRESH command can be used to retain data in the
Mobile-RAM
, even if the rest of the system is
powered down. When in the self refresh mode, the
Mobile-RAM
retains data without external clocking. The SELF
REFRESH command is initiated like an AUTO REFRESH command except CKE is LOW. Input signals except
CKE are “Don’t Care” during SELF REFRESH.
The procedure for exiting SELF REFRESH requires a stable clock prior to CKE returning HIGH. Once CKE is
HIGH, NOP commands must be issued for
t
RC
because time is required for a completion of any internal refresh in
progress.
The use of SELF REFRESH mode introduces the possibility that an internally timed event can be missed when
CKE is raised for exit from SELF REFRESH mode. Upon exit from SELF REFRESH an extra AUTO REFRESH
command is recommended.
Figure 44
Self Refresh Entry and Exit
= Don't Care
CS
CKE
CLK
A0-A11
BA0,BA1
CAS
WE
RAS
t
RP
> t
RC
t
RC
t
RC
Self Refresh
Entry Command
Self Refresh
Exit Command
Exit from
Self Refresh
Any Command
(Auto Refresh
Recommended)
= Don't Care
t
SREX
A10 (AP)
Pre All
Row n
CLK
CKE
Command
NOP
ARF
NOP
NOP
NOP
PRE
ARF
ACT
NOP
Address
Ba A,
Row n
DQ
High-Z
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