參數(shù)資料
型號: HYB18L128160BF-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
中文描述: 針對移動應用的DRAM
文件頁數(shù): 7/53頁
文件大小: 1328K
代理商: HYB18L128160BF-75
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Overview
Data Sheet
7
V1.4, 2004-04-30
1
Overview
1.1
Features
4 banks
×
2 Mbit
×
16 organization
Fully synchronous to positive clock edge
Four internal banks for concurrent operation
Programmable CAS latency: 2, 3
Programmable burst length: 1, 2, 4, 8 or full page
Programmable wrap sequence: sequential or interleaved
Programmable drive strength
Auto refresh and self refresh modes
4096
refresh cycles / 64 ms
Auto precharge
Commerical (0°C to +70°C) and Extended (-25
o
C to +85
o
C) operating temperature range
54-ball P-VFBGA package (12.0
×
8.0
×
1.0 mm)
Power Saving Features
Low supply voltages:
V
DD
= 1.8 V
±
0.15 V,
V
DDQ
= 1.8 V
±
0.15 V
Optimized self refresh (
I
DD6
) and standby currents (
I
DD2
/
I
DD3
)
Programmable Partial Array Self Refresh (PASR)
Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
Power-Down and Deep Power Down modes
Table 1
Part Number Speed Code
Speed Grade
Access Time (
t
ACmax
)
Performance
- 7.5
133
5.4
6.0
7.5
9.5
Unit
MHz
ns
ns
ns
ns
CL = 3
CL = 2
CL = 3
CL = 2
Clock Cycle Time (
t
CKmin
)
Table 2
Item
Banks
Rows
Columns
Memory Addressing Scheme
Addresses
BA0, BA1
A0 - A11
A0 - A8
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