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| 型號： | HYB18L128160BF-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | 針對移動應用的DRAM |
| 文件頁數(shù)： | 32/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BF-75 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
32
V1.4, 2004-04-30
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either
case, a continuous flow of input data can be maintained. A WRITE command can be issued on any positive edge
of clock following the previous WRITE command. The first data element from the new burst is applied after either
the last element of a completed burst (
Figure 27
) or the last desired data element of a longer burst which is being
truncated (
Figure 28
). The new WRITE command should be issued x cycles after the first WRITE command,
where x equals the number of desired data elements.
Figure 27
Consecutive WRITE Bursts
Figure 28
Random WRITE Bursts
Non-consecutive WRITE bursts are shown in
Figure 29
.
Figure 29
Non-Consecutive WRITE Bursts
Ba A, Col n (b) = Bank A, Column n (b)
DI n (b) = Data In to column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data In are provided in the programmed order following DI n (b).
Command
NOP
NOP
NOP
NOP
NOP
NOP
NOP
WRITE
WRITE
CLK
Address
Ba A,
Col b
Ba A,
Col n
DQ
DI n
DI n+1
DI n+2
DI n+3
DI b
DI b+1
DI b+2
DI b+3
= Don't Care
Ba A, Col n etc. = Bank A, Column n etc.
DI n etc. = Data In to column n etc.
Burst Length = 4 in the case shown; bursts are terminated by consecutive WRITE commands.
3 subsequent elements of Data In are provided in the programmed order following DI m .
= Don't Care
CLK
Command
NOP
NOP
NOP
NOP
NOP
WRITE
WRITE
WRITE
WRITE
Address
Ba A,
Col m
Ba A,
Col x
Ba A,
Col a
Ba A,
Col n
DQ
DI n
DI a
DI x
DI m
DI m+1
DI m+2
DI m+3
Ba A, Col n (b) = Bank A, Column n (b)
DI n (b) = Data In to column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data In are provided in the programmed order following DI n (b).
= Don't Care
CLK
WRITE
Command
NOP
NOP
NOP
NOP
NOP
NOP
NOP
WRITE
Ba A,
Col n
Address
Ba A,
Col b
DI b
DQ
DI n
DI n+1
DI n+2
DI n+3
DI b+1
DI b+2
相關PDF資料 |
PDF描述 |
|---|---|
| HYB18L128160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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