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參數(shù)資料
| 型號： | HYB18L128160BF-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | 針對移動應(yīng)用的DRAM |
| 文件頁數(shù)： | 46/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BF-75 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
46
V1.4, 2004-04-30
9) Concurrent Auto Precharge: bank n will start precharging when its burst has been interrupted by a READ or WRITE
command to bank m.
Table 16
CKEn-1
L
Truth Table - CKE
CKEn
Current State
L
Power Down
Self Refresh
Clock Suspend
Deep Power Down
Command
X
X
X
X
Action
Maintain Power Down
Maintain Self Refresh
Maintain Clock Suspend
Maintain Deep Power
Down
Exit Power Down
Exit Self Refresh
Exit Clock Suspend
Exit Deep Power Down
Enter Precharge Power
Down
Enter Active Power Down
Enter Self Refresh
Enter Clock Suspend
Notes
1)2)3)4)
1) CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2) Current state is the state immediately prior to clock edge n.
3) COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
4) All states and sequences not shown are illegal or reserved.
5) DESELECT or NOP commands should be issued on any clock edges occurring during
t
RC
period.
6) Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
1) to 4)
1) to 4)
1) to 4)
L
H
Power Down
Self Refresh
Clock Suspend
Deep Power Down
All Banks Idle
DESELECT or NOP
DESELECT or NOP
X
X
DESELECT or NOP
1) to 4)
1) to 5)
1) to 4)
1) to 4), 6)
H
L
1) to 4)
Bank(s) Active
All Banks Idle
Read / Write burst
DESELECT or NOP
AUTO REFRESH
(valid)
see
Table 14
and
Table 15
1) to 4)
1) to 4)
1) to 4)
H
H
1) to 4)
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| HYB18L128160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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