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參數(shù)資料
| 型號(hào)： | HYB18L128160BF-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | 針對(duì)移動(dòng)應(yīng)用的DRAM |
| 文件頁數(shù)： | 44/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BF-75 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
44
V1.4, 2004-04-30
Write
(Auto-
Precharge
Disabled)
L
L
L
L
H
H
L
H
L
L
H
H
H
L
L
L
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate WRITE burst, start precharge)
BURST TERMINATE
1) to 6), 9)
1) to 6), 9)
1) to 6), 10)
1) to 6), 11)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH and after
t
RC
has been met (if the previous state was self
refresh).
2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are
those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3) Current state definitions:
Idle:
The bank has been precharged, and
t
RP
has been met.
Row Active:
A row in the bank has been activated, and
t
RCD
has been met. No data bursts/accesses and no register
accesses are in progress.
Read:
A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
Write:
A WRITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
4) The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or
allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable
commands to the other bank are determined by its current state and according to
Table 15
.
Precharging:
Starts with registration of a PRECHARGE command and ends when
t
RP
is met. Once
t
RP
is met, the bank
is in the “idle” state.
Row Activating: Starts with registration of an ACTIVE command and ends when
t
RCD
is met. Once
t
RCD
is met, the bank
is in the “row active” state.
Read with AP
Enabled:
Starts with registration of a READ command with Auto Precharge enabled and ends when
t
RP
has been
met. Once
t
RP
is met, the bank is in the idle state.
Write with AP
Enabled:
Starts with registration of a WRITE command with Auto Precharge enabled and ends when
t
RP
has been
met. Once
t
RP
is met, the bank is in the idle state.
5) The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied
on each positive clock edge during these states.
Refreshing:
Starts with registration of an AUTO REFRESH command and ends when
t
RC
is met. Once
t
RC
is met, the
SDRAM is in the “all banks idle” state.
Accessing Mode
Register:
Starts with registration of a MODE REGISTER SET command and ends when
t
MRD
has been met. Once
t
MRD
is met, the SDRAM is in the “all banks idle” state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
t
RP
is met. Once
t
RP
is met, all
banks are in the idle state.
6) All states and sequences not shown are illegal or reserved.
7) Not bank-specific; requires that all banks are idle and no bursts are in progress.
8) Same as NOP command in that state.
9) READs or WRITEs listed in the Command/Action column include READs or WRITEs with Auto Precharge enabled and
READs or WRITEs with Auto Precharge disabled.
10) May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
11) Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.
Table 15
Current State
Any
Current State Bank n - Command to Bank m (different bank)
CS
RAS CAS
WE
Command / Action
H
X
X
X
DESELECT (NOP / continue previous operation)
L
H
H
H
NO OPERATION (NOP / continue previous operation)
Notes
1)2)3)4)5)6)
1) to 6)
Table 14
Current State
Current State Bank n - Command to Bank n
(cont’d)
CS
RAS CAS
WE
Command / Action
Notes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L128160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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