參數(shù)資料
型號(hào)： HB52E89EM
廠商： Hitachi,Ltd.
英文描述： 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述： 64 MB的無(wú)緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 52/64頁(yè)
文件大小： 2741K
代理商： HB52E89EM
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
52
Reading
Writing
Refresh
Auto-refresh:
All the banks must be precharged before executing an auto-refresh command. Since the auto-
refresh command updates the internal counter every time it is executed and determines the banks and the
ROW addresses to be refreshed, external address specification is not required. The refresh cycle is 4096 cy-
cles/64 ms. (4096 cycles are required to refresh all the ROW addresses.) The output buffer becomes High-
Z after auto-refresh start. In addition, since a precharge has been completed by an internal operation after the
auto-refresh, an additional precharge operation by the precharge command is not required.
Self-refresh:
After executing a self-refresh command, the self-refresh operation continues while CKE is held
Low. During self-refresh operation, all ROW addresses are refreshed by the internal refresh timer. A self-
refresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh
to all refresh addresses in or within 64 ms period on the condition (1) and (2) below.
(1) Enter self-refresh mode within 15.6
μ
s after either burst refresh or distributed refresh at equal interval to
all refresh addresses are completed.
(2) Start burst refresh or distributed refresh at equal interval to all refresh addresses within 15.6
μ
s after ex-
iting from self-refresh mode.
CK
Dout
out 0
out 1
l = 2 Latency
out 3
DQMB
High-Z
CK
Din
in 0
in 1
l = 0 Latency
in 3
DQMB
相關(guān)PDF資料
PDF描述
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E89EM-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52F168GB-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F168GB-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F168GB-B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM
HB52F328DC-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
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