參數(shù)資料
型號: HB52E89EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 12/64頁
文件大?。?/td> 2741K
代理商: HB52E89EM
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
12
Block Diagram (HB52E89EM)
DQMB0
D1
I/O0
to I/O7
I/O0
to I/O7
DQM
DQM
DQ0 to DQ7
DQ8 to DQ15
DQMB1
* D0 to D8: HM5264805
U0: 2-kbit EEPROM
C0 to C9: 0.33
μ
F, C10 to C19: 0.10
μ
F
C100, C101: 10 pF
R1: 47 k
N0 to N17: Network registor 10
R100 to R103: 10
V
CC
(D0 to D8, U0)
C9 to C17
V
SS
(D0 to D8, U0)
Serial PD
SDA
WP
R1
A0
A1
A2
SA0 SA1 SA2
V
SS
V
SS
V
CC
SCL
U0
SDA
SCL
Notes:
1. The SDA pull-up resistor is required due to
the open-drain/open-collector output.
2. The SCL pull-up resistor is recommended
because of the normal SCL line inacitve
"high" state.
8 N0, N1
8 N2, N3
DQMB4
DQ32 to DQ39
DQ40 to DQ47
DQMB5
8 N10, N11
8 N12, N13
C0 to C8
RE
,
CE
,
W
CS
CS
D2
I/O0
to I/O7
DQM
CB0 to CB7
8
N4, N5
CS
D6
D5
D0
I/O0
to I/O7
I/O0
to I/O7
DQM
DQM
CS
CS
S0
S2
DQMB2
D4
I/O0
to I/O7
I/O0
to I/O7
DQM
DQM
DQ16 to DQ23
DQ24 to DQ31
DQMB3
8 N6, N7
8 N8, N9
DQMB6
DQ48 to DQ55
DQ56 to DQ63
DQMB7
8 N14, N15
8 N16, N17
CS
CS
D8
D7
D3
I/O0
to I/O7
I/O0
to I/O7
DQM
DQM
CS
CS
A0 to A13
R100
CK0
CLK ; 5 SDRAMs
R102
CK2
CLK; 4 SDRAMs + 3.3 pF cap
CKE (D0 to D8)
CKE0
CK1
R101
C100
CK3
R103
C101
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