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參數(shù)資料
| 型號： | HB52E89EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 31/64頁 |
| 文件大?。?/td> | 2741K |
| 代理商： | HB52E89EM |
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HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
31
Notes: 1. H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
The other combinations are inhibit.
2. An interval of t
DPL
is required between the final valid data input and the precharge command.
3. If t
RRD
is not satisfied, this operation is illegal.
4. Illegal for same bank, except for another bank.
5. Illegal for all banks.
6. NOP for same bank, except for another bank.
From PRECHARGE state, command operation
To [DESL], [NOP] or [BST]:
When these commands are executed, the SDRAM module enters the IDLE
state after t
RP
has elapsed from the completion of precharge.
Write
H
L
L
L
L
L
×
H
H
H
H
L
×
H
H
L
L
H
×
H
L
H
L
H
×
×
×
BA, CA, A10 READ/READ A
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
DESL
NOP
BST
Continue burst to end
Continue burst to end
Burst stop on full page
Term burst and New read
Term burst and New write
Other bank active
ILLEGAL on same bank*
3
Term burst write and
Precharge*
2
ILLEGAL
ILLEGAL
Continue burst to end and
precharge
Continue burst to end and
precharge
ILLEGAL
ILLEGAL*
4
ILLEGAL*
4
Other bank active
ILLEGAL on same bank*
3
ILLEGAL*
4
ILLEGAL
ILLEGAL
Enter IDLE after t
RC
Enter IDLE after t
RC
Enter IDLE after t
RC
ILLEGAL*
5
ILLEGAL*
5
ILLEGAL*
5
ILLEGAL*
5
ILLEGAL
ILLEGAL
L
L
H
L
BA, A10
PRE, PALL
L
L
H
L
L
×
L
L
×
H
L
×
×
MODE
×
REF, SELF
MRS
DESL
Write with auto-
precharge
L
H
H
H
×
NOP
L
L
L
L
H
H
H
L
H
L
L
H
L
H
L
H
×
BA, CA, A10 READ/READ A
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
BST
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
×
H
H
H
H
L
L
L
L
H
L
L
×
H
H
L
L
H
H
L
L
L
H
L
×
H
L
H
L
H
L
H
L
BA, A10
×
MODE
×
×
×
BA, CA, A10 READ/READ A
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
BA, A10
PRE, PALL
×
REF, SELF
MODE
MRS
PRE, PALL
REF, SELF
MRS
DESL
NOP
BST
Refresh (auto-
refresh)
Current state
S
RE
CE
W
Address
Command
Operation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E169E12 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E89EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52F168GB-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM |
| HB52F328DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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