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參數(shù)資料
| 型號： | HB52E89EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內存（64MB的未緩沖同步的DRAM內存） |
| 文件頁數(shù)： | 43/64頁 |
| 文件大?。?/td> | 2741K |
| 代理商： | HB52E89EM |
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HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
43
WRITE to WRITE Command Interval (same ROW address in same bank)
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two write commands with a precharge command and a
bank-active command.
3. Different bank:
When the bank changes, the second write can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. In the case of burst write, the second
write command has priority.
WRITE to WRITE Command Interval (different bank)
Read command to Write command interval:
1. Same bank, same ROW address:
When the write command is executed at the same ROW address of
the same bank as the preceding read command, the write command can be performed after an interval of no
less than 1 clock. However, DQMB must be set High so that the output buffer becomes High-Z before data
input.
CK
Command
Din
in B3
Address
in B1
in B2
BA
ACTV
Row
Column A
WRIT
WRIT
Column B
in A0
in B0
Bank0
Active
Column =A
Write
Column =B
Write
Burst Write Mode
Burst Length = 4
Bank 0
CK
Command
Din
in B3
Address
in B1
in B2
BA
ACTV
Row 0
Row 1
ACTV
WRIT
Column A
in A0
in B0
Bank0
Active
Bank3
Active
Bank0
Write
Bank3
Write
WRIT
Column B
Burst Write Mode
Burst Length = 4
相關PDF資料 |
PDF描述 |
|---|---|
| HB52E169E12 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E89EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52F168GB-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM |
| HB52F328DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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