參數(shù)資料
型號: HB52E89EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 50/64頁
文件大小: 2741K
代理商: HB52E89EM
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
50
Burst Length = 4 (To write all data)
Bank active command interval:
1. Same bank:
The interval between the two bank-active commands must be no less than t
RC
.
Bank active to bank active for same bank
2. In the case of different bank-active commands:
The interval between the two bank-active commands
must be no less than t
RRD
.
CK
in A0
in A1
in A2
Command
Din
WRIT
PRE/PALL
in A3
DQMB
t
DPL
CK
Command
Address
BA
Bank 0
Active
ACTV
ROW
ACTV
ROW
Bank 0
Active
t
RC
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HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
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