參數(shù)資料
型號(hào)： HB52E89EM
廠商： Hitachi,Ltd.
英文描述： 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述： 64 MB的無緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存）
文件頁數(shù)： 32/64頁
文件大?。?/td> 2741K
代理商： HB52E89EM
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
32
From IDLE state, command operation
To [DESL], [NOP], [BST], [PRE] or [PALL]:
These commands result in no operation.
To [ACTV]:
The bank specified by the address pins and the ROW address is activated.
To [REF], [SELF]:
The SDRAM module enters refresh mode (auto-refresh or self-refresh).
To [MRS]:
The SDRAM module enters the mode register set cycle.
From ROW ACTIVE state, command operation
To [DESL], [NOP] or [BST]:
These commands result in no operation.
To [READ], [READ A]:
A read operation starts. (However, an interval of t
RCD
is required.)
To [WRIT], [WRIT A]:
A write operation starts. (However, an interval of t
RCD
is required.)
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands set the SDRAM module to precharge mode. (However, an interval
of t
RAS
is required.)
From READ state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
Data output by the previous read command continues to be output. After CE la-
tency, the data output resulting from the next command will start.
To [WRIT], [WRIT A]:
These commands stop a burst read, and start a write cycle.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands stop a burst read, and the SDRAM module enters precharge mode.
From READ with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed, and
the SDRAM module then enters precharge mode.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
From WRITE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
These commands stop a burst and start a read cycle.
To [WRIT], [WRIT A]:
These commands stop a burst and start the next write cycle.
相關(guān)PDF資料
PDF描述
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
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參數(shù)描述
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HB52F168GB-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F168GB-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F168GB-B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM
HB52F328DC-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
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