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參數(shù)資料
| 型號： | HB52E89EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 46/64頁 |
| 文件大?。?/td> | 2741K |
| 代理商： | HB52E89EM |
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HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
46
2. Same bank:
The consecutive read command (the same bank) is illegal.
Write with auto precharge to Write command interval
1. Different bank:
When some banks are in the active state, the second write command (another bank) is
executed. In the case of burst writes, the second write command has priority. The internal auto-precharge of
one bank starts at the next clock of the second command .
Write with Auto Precharge to Write Command Interval
(Different bank)
2. Same bank:
The consecutive write command (the same bank) is illegal.
Read with auto precharge to Write command interval
Different bank:
When some banks are in the active state, the second write command (another bank) is exe-
cuted. However, DQMB must be set High so that the output buffer becomes High-Z before data input. The
internal auto-precharge of one bank starts at the next clock of the second command.
Read with Auto Precharge to Write Command Interval
(Different bank)
CK
Command
BA
Dout
READ A
READ
out A0
out A1
out B0
out B1
CE
Latency = 3
Burst Length = 4
bank0
Read A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
CK
Command
BA
Din
WRIT A
WRIT
in B1
in B2
in B3
in A0
in A1
in B0
Burst Length = 4
bank0
Write A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E169E12 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E89EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52F168GB-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM |
| HB52F328DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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