參數(shù)資料
型號: DSP56367UM
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
元件分類: 數(shù)字信號處理
英文描述: 24-Bit Audio Digital Signal Processor
中文描述: 24位音頻數(shù)字信號處理器
文件頁數(shù): 26/100頁
文件大小: 1039K
代理商: DSP56367UM
Thermal Characteristics
DSP56367 Technical Data, Rev. 2.1
3-2
Freescale Semiconductor
3.3
Thermal Characteristics
Table 3-1 Maximum Ratings
Rating
1
Symbol
Value
1, 2
1
GND = 0 V, VCCP, VCCQL = 1.8 V ±5%, TJ = –40×C to +95×C, CL = 50 pF
All other VCC = 3.3 V ± 5%, TJ = –40×C to +95×C, CL = 50 pF
2
Absolute maximum ratings are stress ratings only, and functional operation at the maximum is not guaranteed. Stress beyond
the maximum rating may affect device reliability or cause permanent damage to the device.
3
Temperatures below -0°C are qualified for consumer applications.
Unit
Supply Voltage
V
CCQL,
V
CCP
0.3 to + 2.0
V
V
CCQH,
V
CCA,
V
CCD,
V
CCC,
V
CCH,
V
CCS,
0.3 to + 4.0
V
All “3.3V tolerant” input voltages
V
IN
GND
0.3 to V
CC
+ 0.7
V
Current drain per pin excluding V
CC
and GND
I
10
mA
Operating temperature range
3
T
J
40 to + 95
°
C
Storage temperature
T
STG
55 to +125
°
C
Table 3-2 Thermal Characteristics
Characteristic
Symbol
TQFP Value
Unit
Natural Convection, Junction-to-ambient thermal resistance
1,2
1
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
2
Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
3
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
4
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is
written as Psi-JT.
R
θ
JA
or
θ
JA
45.0
°
C/W
Junction-to-case thermal resistance
3
R
θ
JC
or
θ
JC
10.0
°
C/W
Natural Convection, Thermal characterization parameter
4
Ψ
JT
3.0
°
C/W
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